Correlation of optical properties and structural analysis for cobalt silicide layers buried in silicon

C. H. Perry, F. Lu, F. Namavar, H. P. Maruska

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The optical reflectivity from buried and exposed CoSi2 layers produced by Co ion implantation of Si substrates has been measured over the energy range 0.012-6.2 eV (0.2-100 μm). Both unannealed and annealed layers were investigated. The complex dielectric constant of the bare CoSi2 layer was obtained from a Kramers-Kronig analysis. The plasma frequency, carrier concentration and relaxation time of the buried CoSi2 layers were obtained from classical dispersion analyses of the multicomponent reflectivity data. The effective carrier concentration derived from the optical data and the measured channeling from Rutherford back scattering correlated with anneal temperature.

Original languageEnglish (US)
Title of host publicationMaterials Research Society Symposium Proceedings
PublisherPubl by Materials Research Society
Pages887-892
Number of pages6
ISBN (Print)1558991743
Publication statusPublished - Jan 1 1993
EventBeam Solid Interactions: Fundamentals and Applications - Boston, MA, USA
Duration: Nov 30 1992Dec 4 1992

Publication series

NameMaterials Research Society Symposium Proceedings
Volume279
ISSN (Print)0272-9172

Other

OtherBeam Solid Interactions: Fundamentals and Applications
CityBoston, MA, USA
Period11/30/9212/4/92

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ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

Perry, C. H., Lu, F., Namavar, F., & Maruska, H. P. (1993). Correlation of optical properties and structural analysis for cobalt silicide layers buried in silicon. In Materials Research Society Symposium Proceedings (pp. 887-892). (Materials Research Society Symposium Proceedings; Vol. 279). Publ by Materials Research Society.