Correlation between visible and infrared (1.54 μm) luminescence from Er-implanted porous silicon

X. Wu, U. Hömmerich, F. Namavar, A. M. Cremins-Costa

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Abstract

A photoluminescence excitation (PLE) study was performed of Er-implanted porous Si with two different porosities. Erbium was implanted at a dose of 1 × 1015 cm-2 at 380 keV and the samples were annealed for 30 min at temperatures from 650 to 850 °C. We observed that PLE spectra from Er3+ at 1.54 μm are nearly identical to those from the visible-emitting porous Si layers. Our results provide the first direct experimental evidence that infrared photoluminescence at 1.54 μm arises from Er3+ ions in porous Si and that ions are excited through the recombination of excess carriers spatially confined in Si nanograms.

Original languageEnglish (US)
Pages (from-to)1903-1905
Number of pages3
JournalApplied Physics Letters
Volume69
Issue number13
DOIs
StatePublished - Sep 23 1996

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porous silicon
luminescence
photoluminescence
erbium
excitation
ions
porosity
dosage
temperature

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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Correlation between visible and infrared (1.54 μm) luminescence from Er-implanted porous silicon. / Wu, X.; Hömmerich, U.; Namavar, F.; Cremins-Costa, A. M.

In: Applied Physics Letters, Vol. 69, No. 13, 23.09.1996, p. 1903-1905.

Research output: Contribution to journalArticle

Wu, X. ; Hömmerich, U. ; Namavar, F. ; Cremins-Costa, A. M. / Correlation between visible and infrared (1.54 μm) luminescence from Er-implanted porous silicon. In: Applied Physics Letters. 1996 ; Vol. 69, No. 13. pp. 1903-1905.
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