Correlation between optical properties and Si nanocrystal formation of Si-rich Si oxide films prepared by plasma-enhanced chemical vapor deposition

X. Y. Chen, Y. F. Lu, Y. H. Wu, B. J. Cho, L. J. Tang, D. Lu, J. R. Dong

Research output: Contribution to journalArticle

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Abstract

We have investigated the phase separation and silicon nanocrystal (Si NC) formation in correlation with the optical properties of Si suboxide (SiO x , 0 < x < 2) films by thermal annealing in high vacuum. The SiO x films were deposited by plasma-enhanced chemical vapor deposition at different nitrous oxide/silane (N 2 O/SiH 4 ) flow ratios. The as-deposited films show increased Si concentration with decreasing N 2 O/SiH 4 flow ratio, while the deposition rate and surface roughness have strong correlations with the flow ratio in the N 2 O/SiH 4 reaction. After thermal annealing at temperatures above 1000 °C, Fourier transform infrared spectroscopy, Raman spectroscopy, and transmission electron microscopy manifest the progressive phase separation and continuous growth of crystalline-Si (c-Si) NCs in the SiO x films with increasing annealing temperature. We observe a transition from multiple-peak to single peak of the strong red-range photoluminescence (PL) with increasing Si concentration and annealing temperature. The appearance of the single peak in the PL is closely related to the c-Si NC formation. The PL also redshifts from ∼1.9 to 1.4 eV with increasing Si concentration and annealing temperature (i.e., increasing NC size). The good agreements of the PL evolution with NC formation and the PL peak energy with NC size distribution support the quantum confinement model.

Original languageEnglish (US)
Pages (from-to)2718-2726
Number of pages9
JournalApplied Surface Science
Volume253
Issue number5
DOIs
StatePublished - Dec 30 2006

Fingerprint

Plasma enhanced chemical vapor deposition
Nanocrystals
Oxide films
oxide films
Photoluminescence
nanocrystals
Optical properties
vapor deposition
Annealing
photoluminescence
optical properties
annealing
Phase separation
Crystalline materials
Silanes
Temperature
Quantum confinement
temperature
nitrous oxides
Nitrous Oxide

Keywords

  • Optical properties
  • Plasma-enhanced chemical vapor deposition
  • Silicon nanocrystals
  • Silicon oxide

ASJC Scopus subject areas

  • Surfaces, Coatings and Films

Cite this

Correlation between optical properties and Si nanocrystal formation of Si-rich Si oxide films prepared by plasma-enhanced chemical vapor deposition. / Chen, X. Y.; Lu, Y. F.; Wu, Y. H.; Cho, B. J.; Tang, L. J.; Lu, D.; Dong, J. R.

In: Applied Surface Science, Vol. 253, No. 5, 30.12.2006, p. 2718-2726.

Research output: Contribution to journalArticle

Chen, X. Y. ; Lu, Y. F. ; Wu, Y. H. ; Cho, B. J. ; Tang, L. J. ; Lu, D. ; Dong, J. R. / Correlation between optical properties and Si nanocrystal formation of Si-rich Si oxide films prepared by plasma-enhanced chemical vapor deposition. In: Applied Surface Science. 2006 ; Vol. 253, No. 5. pp. 2718-2726.
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