Conduction mechanisms and interface property of silicon oxide films sputtered under different oxygen concentrations

W. K. Choi, K. K. Han, C. K. Choo, W. K. Chim, Y. F. Lu

Research output: Contribution to journalArticle

8 Citations (Scopus)

Abstract

An investigation on the effects of oxygen mixing in the sputtering gas and rapid thermal annealing on the electrical properties of radio frequency sputtered silicon oxide films has been carried out. The conductivity of the oxide film decreases as the concentration of oxygen in the sputtering gas increases, and also for rapid thermal anneal temperatures higher than 900 °C. Transport mechanisms for films annealed for 50 and 200 s were found to be that of Schottky emission and space charge limited conduction, respectively. From the capacitance versus voltage measurements, it was concluded that the improvement in the oxide quality of the annealed films was not related to the reduction of the interface trapped charge density.

Original languageEnglish (US)
Pages (from-to)4810-4815
Number of pages6
JournalJournal of Applied Physics
Volume83
Issue number9
DOIs
StatePublished - May 1 1998

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silicon oxides
oxide films
sputtering
conduction
oxygen
gases
electrical measurement
space charge
radio frequencies
capacitance
electrical properties
conductivity
annealing
oxides

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

Conduction mechanisms and interface property of silicon oxide films sputtered under different oxygen concentrations. / Choi, W. K.; Han, K. K.; Choo, C. K.; Chim, W. K.; Lu, Y. F.

In: Journal of Applied Physics, Vol. 83, No. 9, 01.05.1998, p. 4810-4815.

Research output: Contribution to journalArticle

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