Combined Raman scattering, X-ray fluorescence and ellipsometry in-situ growth monitoring of CuInSe2-based photoabsorber layers on polyimide substrates

C. Bundesmann, M. Schubert, N. Ashkenov, M. Grundmann, G. Lippold, J. Piltz

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

The combination of Raman scattering, X-ray fluorescence, and spectroscopic ellipsometry is presented as a new approach for in-situ optical monitoring of multinary semiconductor thin film growth. Our setup allows to determine phonon modes, chemical composition, the fundamental band gap energy, and the absorption coefficient of the semiconductor material immediately during the growth. We demonstrate our new approach exemplarily for CuInSe2, a multinary alloy with complex phase diagram. Process monitoring was performed on solar cell absorber layers deposited on flexible substrates in a roll-to-roll process.

Original languageEnglish (US)
Title of host publicationPHYSICS OF SEMICONDUCTORS
Subtitle of host publication27th International Conference on the Physics of Semiconductors, ICPS-27
Pages165-166
Number of pages2
DOIs
StatePublished - Jun 30 2005
EventPHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors, ICPS-27 - Flagstaff, AZ, United States
Duration: Jul 26 2004Jul 30 2004

Publication series

NameAIP Conference Proceedings
Volume772
ISSN (Print)0094-243X
ISSN (Electronic)1551-7616

Other

OtherPHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors, ICPS-27
CountryUnited States
CityFlagstaff, AZ
Period7/26/047/30/04

Fingerprint

polyimides
ellipsometry
Raman spectra
fluorescence
absorbers
absorptivity
chemical composition
x rays
solar cells
phase diagrams
thin films

ASJC Scopus subject areas

  • Ecology, Evolution, Behavior and Systematics
  • Ecology
  • Plant Science
  • Physics and Astronomy(all)
  • Nature and Landscape Conservation

Cite this

Bundesmann, C., Schubert, M., Ashkenov, N., Grundmann, M., Lippold, G., & Piltz, J. (2005). Combined Raman scattering, X-ray fluorescence and ellipsometry in-situ growth monitoring of CuInSe2-based photoabsorber layers on polyimide substrates. In PHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors, ICPS-27 (pp. 165-166). (AIP Conference Proceedings; Vol. 772). https://doi.org/10.1063/1.1994045

Combined Raman scattering, X-ray fluorescence and ellipsometry in-situ growth monitoring of CuInSe2-based photoabsorber layers on polyimide substrates. / Bundesmann, C.; Schubert, M.; Ashkenov, N.; Grundmann, M.; Lippold, G.; Piltz, J.

PHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors, ICPS-27. 2005. p. 165-166 (AIP Conference Proceedings; Vol. 772).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Bundesmann, C, Schubert, M, Ashkenov, N, Grundmann, M, Lippold, G & Piltz, J 2005, Combined Raman scattering, X-ray fluorescence and ellipsometry in-situ growth monitoring of CuInSe2-based photoabsorber layers on polyimide substrates. in PHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors, ICPS-27. AIP Conference Proceedings, vol. 772, pp. 165-166, PHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors, ICPS-27, Flagstaff, AZ, United States, 7/26/04. https://doi.org/10.1063/1.1994045
Bundesmann C, Schubert M, Ashkenov N, Grundmann M, Lippold G, Piltz J. Combined Raman scattering, X-ray fluorescence and ellipsometry in-situ growth monitoring of CuInSe2-based photoabsorber layers on polyimide substrates. In PHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors, ICPS-27. 2005. p. 165-166. (AIP Conference Proceedings). https://doi.org/10.1063/1.1994045
Bundesmann, C. ; Schubert, M. ; Ashkenov, N. ; Grundmann, M. ; Lippold, G. ; Piltz, J. / Combined Raman scattering, X-ray fluorescence and ellipsometry in-situ growth monitoring of CuInSe2-based photoabsorber layers on polyimide substrates. PHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors, ICPS-27. 2005. pp. 165-166 (AIP Conference Proceedings).
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