CNT infrared detectors using schottky barriers and p-n junctions based FETs

Hongzhi Chen, Ning Xi, King W.C. Lai, Carmen Kar Man Fung, Ruiguo Yang

Research output: Chapter in Book/Report/Conference proceedingConference contribution

5 Citations (Scopus)

Abstract

Carbon nanotube (CNT) Schottky barriers and p-n junctions based photovoltaic photodiodes have been demonstrated they were able to detect infrared (IR) signals. However, how to optimize the performances of these one dimensional (1D) detectors is not clear due to the variation of the properties of as-made CNTs. We investigated the photocurrent variation by modulating the depletion regions through electrostatic doping from a gate of the CNT field effect transistor (FET). It showed that the photocurrent from the Schottky diodes between Au and CNT can be maximized by applying a moderate negative gate voltage, indicating widest depletion width in that state. By introducing a small Aluminum gate underneath and partially couple to a CNT, two inversely connecting p-n junctions will be formed with an appropriate positive gate voltage. As a result, dark current was suppressed around 3 orders and photocurrent was enhanced, resulting in a high on/off ratio photocurrent and a ̃0.1V open circuit voltage. The experiment results show that electrostatic doping using CNTFETs can improve the performances of the 1D photodiodes. The CNTFET based IR detector may have substantial potential for further nano-optoelectronics.

Original languageEnglish (US)
Title of host publication2009 IEEE Nanotechnology Materials and Devices Conference, NMDC 2009
Pages91-95
Number of pages5
DOIs
StatePublished - Nov 23 2009
Event2009 IEEE Nanotechnology Materials and Devices Conference, NMDC 2009 - Traverse City, MI, United States
Duration: Jun 2 2009Jun 5 2009

Publication series

Name2009 IEEE Nanotechnology Materials and Devices Conference, NMDC 2009

Other

Other2009 IEEE Nanotechnology Materials and Devices Conference, NMDC 2009
CountryUnited States
CityTraverse City, MI
Period6/2/096/5/09

Fingerprint

Carbon Nanotubes
Infrared detectors
Field effect transistors
Photocurrents
Carbon nanotubes
Photodiodes
Electrostatics
Doping (additives)
Carbon nanotube field effect transistors
Dark currents
Electric potential
Open circuit voltage
Aluminum
Optoelectronic devices
Diodes
Infrared radiation
Detectors
Experiments

Keywords

  • Carbon nanotube (CNT)
  • Infrared (IR) detector
  • P-n junction
  • Schottky barrier

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

Cite this

Chen, H., Xi, N., Lai, K. W. C., Fung, C. K. M., & Yang, R. (2009). CNT infrared detectors using schottky barriers and p-n junctions based FETs. In 2009 IEEE Nanotechnology Materials and Devices Conference, NMDC 2009 (pp. 91-95). [5167557] (2009 IEEE Nanotechnology Materials and Devices Conference, NMDC 2009). https://doi.org/10.1109/NMDC.2009.5167557

CNT infrared detectors using schottky barriers and p-n junctions based FETs. / Chen, Hongzhi; Xi, Ning; Lai, King W.C.; Fung, Carmen Kar Man; Yang, Ruiguo.

2009 IEEE Nanotechnology Materials and Devices Conference, NMDC 2009. 2009. p. 91-95 5167557 (2009 IEEE Nanotechnology Materials and Devices Conference, NMDC 2009).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Chen, H, Xi, N, Lai, KWC, Fung, CKM & Yang, R 2009, CNT infrared detectors using schottky barriers and p-n junctions based FETs. in 2009 IEEE Nanotechnology Materials and Devices Conference, NMDC 2009., 5167557, 2009 IEEE Nanotechnology Materials and Devices Conference, NMDC 2009, pp. 91-95, 2009 IEEE Nanotechnology Materials and Devices Conference, NMDC 2009, Traverse City, MI, United States, 6/2/09. https://doi.org/10.1109/NMDC.2009.5167557
Chen H, Xi N, Lai KWC, Fung CKM, Yang R. CNT infrared detectors using schottky barriers and p-n junctions based FETs. In 2009 IEEE Nanotechnology Materials and Devices Conference, NMDC 2009. 2009. p. 91-95. 5167557. (2009 IEEE Nanotechnology Materials and Devices Conference, NMDC 2009). https://doi.org/10.1109/NMDC.2009.5167557
Chen, Hongzhi ; Xi, Ning ; Lai, King W.C. ; Fung, Carmen Kar Man ; Yang, Ruiguo. / CNT infrared detectors using schottky barriers and p-n junctions based FETs. 2009 IEEE Nanotechnology Materials and Devices Conference, NMDC 2009. 2009. pp. 91-95 (2009 IEEE Nanotechnology Materials and Devices Conference, NMDC 2009).
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