Chemically decorated boron-nitride nanoribbons

Xiao Jun Wu, Men Hao Wu, Xiao Cheng Zeng

Research output: Contribution to journalArticle

48 Citations (Scopus)

Abstract

Motivated by recent studies of graphenen nanoribbons (GNRs), we explored electronic properties of pure and chemically modified boron nitride nanoribbons (BNNRs) using the density functional theory method. Pure BNNRs with both edges fully saturated by hydrogen are semiconducting with wide band gaps. Values of the band gap depend on the width and the type of edge. The chemical decoration of BNNRs' edges with four different functional groups, including -F, -Cl, -OH, and -NO2, was investigated. The band-gap modulation by chemical decoration may be exploited for nanoelectronic applications.

Original languageEnglish (US)
Pages (from-to)367-372
Number of pages6
JournalFrontiers of Physics in China
Volume4
Issue number3
DOIs
StatePublished - Sep 1 2009

Fingerprint

boron nitrides
density functional theory
broadband
modulation
hydrogen
electronics

Keywords

  • Boron-nitride nanoribbons
  • Chemical modification

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Chemically decorated boron-nitride nanoribbons. / Wu, Xiao Jun; Wu, Men Hao; Zeng, Xiao Cheng.

In: Frontiers of Physics in China, Vol. 4, No. 3, 01.09.2009, p. 367-372.

Research output: Contribution to journalArticle

Wu, Xiao Jun ; Wu, Men Hao ; Zeng, Xiao Cheng. / Chemically decorated boron-nitride nanoribbons. In: Frontiers of Physics in China. 2009 ; Vol. 4, No. 3. pp. 367-372.
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