Characterizing antireflection coatings on textured mono-crystalline silicon with spectroscopic ellipsometry

Jianing Sun, Mario F. Saenger, Mathias Schubert, James N. Hilfiker, Ron Synowicki, Craig M. Herzinger, John A Woollam

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

Mono-crystalline silicon is chemically textured and coated with a silicon nitride surface anti-reflection (AR) film to improve light trapping and device efficiency in photovoltaic applications. The thickness and optical properties of the AR coating determine the effective suppression of reflected light. However, optical characterization of films on chemically textured surfaces is challenging due to the low reflectance. We present new measurement geometries and modeling methodology using Spectroscopic Ellipsometry (SE) to determine film thickness and optical properties of thin AR coatings on textured mono-crystalline silicon. Special measurement geometries are used to collect specular reflected light from the etched silicon pyramid facets. Both apexial and lateral measurement geometries are demonstrated, where the latter requires a special sample stage to tilt and rotate the sample to detect the specular reflected light from the pyramid facets. Measurement considerations are discussed including probe-beam incident angle, sample tilt and rotational angles. Effects of pyramid surface-coverage are also discussed in relation to the proposed measurement geometries. Previous modeling attempts using Effective Medium Approximation (EMA) theory showed inconsistent results when comparing apexial and lateral measurements of the same sample surface. In this work, results from a scattering-corrected modeling approach provide improved consistency for a series of SiNx coatings on textured monocrystalline silicon for both lateral and apexial measurement geometries.

Original languageEnglish (US)
Title of host publication2009 34th IEEE Photovoltaic Specialists Conference, PVSC 2009
Pages1407-1411
Number of pages5
DOIs
StatePublished - Dec 1 2009
Event2009 34th IEEE Photovoltaic Specialists Conference, PVSC 2009 - Philadelphia, PA, United States
Duration: Jun 7 2009Jun 12 2009

Publication series

NameConference Record of the IEEE Photovoltaic Specialists Conference
ISSN (Print)0160-8371

Conference

Conference2009 34th IEEE Photovoltaic Specialists Conference, PVSC 2009
CountryUnited States
CityPhiladelphia, PA
Period6/7/096/12/09

Fingerprint

Antireflection coatings
Spectroscopic ellipsometry
Crystalline materials
Silicon
Geometry
Optical properties
Monocrystalline silicon
Approximation theory
Silicon nitride
Film thickness
Scattering
Coatings

ASJC Scopus subject areas

  • Control and Systems Engineering
  • Industrial and Manufacturing Engineering
  • Electrical and Electronic Engineering

Cite this

Sun, J., Saenger, M. F., Schubert, M., Hilfiker, J. N., Synowicki, R., Herzinger, C. M., & Woollam, J. A. (2009). Characterizing antireflection coatings on textured mono-crystalline silicon with spectroscopic ellipsometry. In 2009 34th IEEE Photovoltaic Specialists Conference, PVSC 2009 (pp. 1407-1411). [5411301] (Conference Record of the IEEE Photovoltaic Specialists Conference). https://doi.org/10.1109/PVSC.2009.5411301

Characterizing antireflection coatings on textured mono-crystalline silicon with spectroscopic ellipsometry. / Sun, Jianing; Saenger, Mario F.; Schubert, Mathias; Hilfiker, James N.; Synowicki, Ron; Herzinger, Craig M.; Woollam, John A.

2009 34th IEEE Photovoltaic Specialists Conference, PVSC 2009. 2009. p. 1407-1411 5411301 (Conference Record of the IEEE Photovoltaic Specialists Conference).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Sun, J, Saenger, MF, Schubert, M, Hilfiker, JN, Synowicki, R, Herzinger, CM & Woollam, JA 2009, Characterizing antireflection coatings on textured mono-crystalline silicon with spectroscopic ellipsometry. in 2009 34th IEEE Photovoltaic Specialists Conference, PVSC 2009., 5411301, Conference Record of the IEEE Photovoltaic Specialists Conference, pp. 1407-1411, 2009 34th IEEE Photovoltaic Specialists Conference, PVSC 2009, Philadelphia, PA, United States, 6/7/09. https://doi.org/10.1109/PVSC.2009.5411301
Sun J, Saenger MF, Schubert M, Hilfiker JN, Synowicki R, Herzinger CM et al. Characterizing antireflection coatings on textured mono-crystalline silicon with spectroscopic ellipsometry. In 2009 34th IEEE Photovoltaic Specialists Conference, PVSC 2009. 2009. p. 1407-1411. 5411301. (Conference Record of the IEEE Photovoltaic Specialists Conference). https://doi.org/10.1109/PVSC.2009.5411301
Sun, Jianing ; Saenger, Mario F. ; Schubert, Mathias ; Hilfiker, James N. ; Synowicki, Ron ; Herzinger, Craig M. ; Woollam, John A. / Characterizing antireflection coatings on textured mono-crystalline silicon with spectroscopic ellipsometry. 2009 34th IEEE Photovoltaic Specialists Conference, PVSC 2009. 2009. pp. 1407-1411 (Conference Record of the IEEE Photovoltaic Specialists Conference).
@inproceedings{4ea22d4126954668879f95a75c6f9cc9,
title = "Characterizing antireflection coatings on textured mono-crystalline silicon with spectroscopic ellipsometry",
abstract = "Mono-crystalline silicon is chemically textured and coated with a silicon nitride surface anti-reflection (AR) film to improve light trapping and device efficiency in photovoltaic applications. The thickness and optical properties of the AR coating determine the effective suppression of reflected light. However, optical characterization of films on chemically textured surfaces is challenging due to the low reflectance. We present new measurement geometries and modeling methodology using Spectroscopic Ellipsometry (SE) to determine film thickness and optical properties of thin AR coatings on textured mono-crystalline silicon. Special measurement geometries are used to collect specular reflected light from the etched silicon pyramid facets. Both apexial and lateral measurement geometries are demonstrated, where the latter requires a special sample stage to tilt and rotate the sample to detect the specular reflected light from the pyramid facets. Measurement considerations are discussed including probe-beam incident angle, sample tilt and rotational angles. Effects of pyramid surface-coverage are also discussed in relation to the proposed measurement geometries. Previous modeling attempts using Effective Medium Approximation (EMA) theory showed inconsistent results when comparing apexial and lateral measurements of the same sample surface. In this work, results from a scattering-corrected modeling approach provide improved consistency for a series of SiNx coatings on textured monocrystalline silicon for both lateral and apexial measurement geometries.",
author = "Jianing Sun and Saenger, {Mario F.} and Mathias Schubert and Hilfiker, {James N.} and Ron Synowicki and Herzinger, {Craig M.} and Woollam, {John A}",
year = "2009",
month = "12",
day = "1",
doi = "10.1109/PVSC.2009.5411301",
language = "English (US)",
isbn = "9781424429509",
series = "Conference Record of the IEEE Photovoltaic Specialists Conference",
pages = "1407--1411",
booktitle = "2009 34th IEEE Photovoltaic Specialists Conference, PVSC 2009",

}

TY - GEN

T1 - Characterizing antireflection coatings on textured mono-crystalline silicon with spectroscopic ellipsometry

AU - Sun, Jianing

AU - Saenger, Mario F.

AU - Schubert, Mathias

AU - Hilfiker, James N.

AU - Synowicki, Ron

AU - Herzinger, Craig M.

AU - Woollam, John A

PY - 2009/12/1

Y1 - 2009/12/1

N2 - Mono-crystalline silicon is chemically textured and coated with a silicon nitride surface anti-reflection (AR) film to improve light trapping and device efficiency in photovoltaic applications. The thickness and optical properties of the AR coating determine the effective suppression of reflected light. However, optical characterization of films on chemically textured surfaces is challenging due to the low reflectance. We present new measurement geometries and modeling methodology using Spectroscopic Ellipsometry (SE) to determine film thickness and optical properties of thin AR coatings on textured mono-crystalline silicon. Special measurement geometries are used to collect specular reflected light from the etched silicon pyramid facets. Both apexial and lateral measurement geometries are demonstrated, where the latter requires a special sample stage to tilt and rotate the sample to detect the specular reflected light from the pyramid facets. Measurement considerations are discussed including probe-beam incident angle, sample tilt and rotational angles. Effects of pyramid surface-coverage are also discussed in relation to the proposed measurement geometries. Previous modeling attempts using Effective Medium Approximation (EMA) theory showed inconsistent results when comparing apexial and lateral measurements of the same sample surface. In this work, results from a scattering-corrected modeling approach provide improved consistency for a series of SiNx coatings on textured monocrystalline silicon for both lateral and apexial measurement geometries.

AB - Mono-crystalline silicon is chemically textured and coated with a silicon nitride surface anti-reflection (AR) film to improve light trapping and device efficiency in photovoltaic applications. The thickness and optical properties of the AR coating determine the effective suppression of reflected light. However, optical characterization of films on chemically textured surfaces is challenging due to the low reflectance. We present new measurement geometries and modeling methodology using Spectroscopic Ellipsometry (SE) to determine film thickness and optical properties of thin AR coatings on textured mono-crystalline silicon. Special measurement geometries are used to collect specular reflected light from the etched silicon pyramid facets. Both apexial and lateral measurement geometries are demonstrated, where the latter requires a special sample stage to tilt and rotate the sample to detect the specular reflected light from the pyramid facets. Measurement considerations are discussed including probe-beam incident angle, sample tilt and rotational angles. Effects of pyramid surface-coverage are also discussed in relation to the proposed measurement geometries. Previous modeling attempts using Effective Medium Approximation (EMA) theory showed inconsistent results when comparing apexial and lateral measurements of the same sample surface. In this work, results from a scattering-corrected modeling approach provide improved consistency for a series of SiNx coatings on textured monocrystalline silicon for both lateral and apexial measurement geometries.

UR - http://www.scopus.com/inward/record.url?scp=77951588483&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=77951588483&partnerID=8YFLogxK

U2 - 10.1109/PVSC.2009.5411301

DO - 10.1109/PVSC.2009.5411301

M3 - Conference contribution

SN - 9781424429509

T3 - Conference Record of the IEEE Photovoltaic Specialists Conference

SP - 1407

EP - 1411

BT - 2009 34th IEEE Photovoltaic Specialists Conference, PVSC 2009

ER -