Characterization of visible and infrared (1.54 μm) luminescence from Er-doped porous Si

R. White, X. Wu, U. Hommerich, F. Namavar, A. M. Cremins-Costa

Research output: Contribution to journalConference article

6 Citations (Scopus)

Abstract

Results of a photoluminescence excitation (PLE) study of Er-implanted porous Si (Er:PSi) are presented. Erbium was implanted at a dose of 1×1015 Er/cm2 at 380 keV and annealed for 30 minutes at 650°C. We observed a nearly identical PLE intensity behavior from 1.54 μm and visible-emitting Er:PSi. This observation indicates that both visible and infrared photoluminescence (PL) arise from carrier mediated processes, and that the 1.54 μm Er+ PL is related to the porous Si nanostructures. Measurements of the temperature dependence (15-375 K) of Er3+ PL intensity and lifetime are also reported.

Original languageEnglish (US)
Pages (from-to)137-142
Number of pages6
JournalMaterials Research Society Symposium - Proceedings
Volume422
StatePublished - Dec 1 1996
EventProceedings of the 1996 MRS Spring Symposium - San Francisco, CA, USA
Duration: Apr 8 1996Apr 12 1996

Fingerprint

Luminescence
Photoluminescence
luminescence
Infrared radiation
photoluminescence
Erbium
erbium
excitation
Nanostructures
life (durability)
dosage
temperature dependence
Temperature

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

White, R., Wu, X., Hommerich, U., Namavar, F., & Cremins-Costa, A. M. (1996). Characterization of visible and infrared (1.54 μm) luminescence from Er-doped porous Si. Materials Research Society Symposium - Proceedings, 422, 137-142.

Characterization of visible and infrared (1.54 μm) luminescence from Er-doped porous Si. / White, R.; Wu, X.; Hommerich, U.; Namavar, F.; Cremins-Costa, A. M.

In: Materials Research Society Symposium - Proceedings, Vol. 422, 01.12.1996, p. 137-142.

Research output: Contribution to journalConference article

White, R, Wu, X, Hommerich, U, Namavar, F & Cremins-Costa, AM 1996, 'Characterization of visible and infrared (1.54 μm) luminescence from Er-doped porous Si', Materials Research Society Symposium - Proceedings, vol. 422, pp. 137-142.
White, R. ; Wu, X. ; Hommerich, U. ; Namavar, F. ; Cremins-Costa, A. M. / Characterization of visible and infrared (1.54 μm) luminescence from Er-doped porous Si. In: Materials Research Society Symposium - Proceedings. 1996 ; Vol. 422. pp. 137-142.
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AB - Results of a photoluminescence excitation (PLE) study of Er-implanted porous Si (Er:PSi) are presented. Erbium was implanted at a dose of 1×1015 Er/cm2 at 380 keV and annealed for 30 minutes at 650°C. We observed a nearly identical PLE intensity behavior from 1.54 μm and visible-emitting Er:PSi. This observation indicates that both visible and infrared photoluminescence (PL) arise from carrier mediated processes, and that the 1.54 μm Er+ PL is related to the porous Si nanostructures. Measurements of the temperature dependence (15-375 K) of Er3+ PL intensity and lifetime are also reported.

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