Characterization of multilayer gaas/algaas transistor structures by variable angle spectroscopic ellipsometry

Kenneth G. Merkel, John A Woollam

Research output: Contribution to journalArticle

8 Citations (Scopus)

Abstract

Variable angle of incidence spectroscopic ellipsometry (VASE) has been implemented as a means of determining layer thickness, alloy composition, and growth quality of GaAs/AlGaAs samples composed of relatively thick layers as well as superlattices. The structures studied in this work contained GaAs/AlGaAs multilayers with a superlattice 舠barrier舡 and were grown for later formation of modulation-doped field effect transistors (MODFETs). Sample modeling was performed by treating the superlattice as a bulk AlGaAs layer of unknown composition. Extremely good data fits were realized when five layer thicknesses and two alloy ratios were allowed to vary in a regression analysis. Room temperature excitonic effects associated with the e-hh(1), e-lh(1) and e-hh(2) transitions were observed in the VASE data.

Original languageEnglish (US)
Pages (from-to)1118-1123
Number of pages6
JournalJapanese Journal of Applied Physics
Volume28
Issue number6 R
DOIs
StatePublished - Jan 1 1989

Fingerprint

Spectroscopic ellipsometry
ellipsometry
aluminum gallium arsenides
Multilayers
Transistors
transistors
Superlattices
High electron mobility transistors
Chemical analysis
Regression analysis
Thermal effects
incidence
temperature effects
superlattices
regression analysis
field effect transistors
modulation
room temperature

Keywords

  • Ellipsometry
  • Gaas, algaas multilayer transistors
  • Layer thicknesses
  • Spectroscopic
  • Variable angle

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

Cite this

Characterization of multilayer gaas/algaas transistor structures by variable angle spectroscopic ellipsometry. / Merkel, Kenneth G.; Woollam, John A.

In: Japanese Journal of Applied Physics, Vol. 28, No. 6 R, 01.01.1989, p. 1118-1123.

Research output: Contribution to journalArticle

@article{71d3bf07c70c45bdb0559770e7dd002c,
title = "Characterization of multilayer gaas/algaas transistor structures by variable angle spectroscopic ellipsometry",
abstract = "Variable angle of incidence spectroscopic ellipsometry (VASE) has been implemented as a means of determining layer thickness, alloy composition, and growth quality of GaAs/AlGaAs samples composed of relatively thick layers as well as superlattices. The structures studied in this work contained GaAs/AlGaAs multilayers with a superlattice 舠barrier舡 and were grown for later formation of modulation-doped field effect transistors (MODFETs). Sample modeling was performed by treating the superlattice as a bulk AlGaAs layer of unknown composition. Extremely good data fits were realized when five layer thicknesses and two alloy ratios were allowed to vary in a regression analysis. Room temperature excitonic effects associated with the e-hh(1), e-lh(1) and e-hh(2) transitions were observed in the VASE data.",
keywords = "Ellipsometry, Gaas, algaas multilayer transistors, Layer thicknesses, Spectroscopic, Variable angle",
author = "Merkel, {Kenneth G.} and Woollam, {John A}",
year = "1989",
month = "1",
day = "1",
doi = "10.1143/JJAP.28.1118",
language = "English (US)",
volume = "28",
pages = "1118--1123",
journal = "Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes",
issn = "0021-4922",
publisher = "Japan Society of Applied Physics",
number = "6 R",

}

TY - JOUR

T1 - Characterization of multilayer gaas/algaas transistor structures by variable angle spectroscopic ellipsometry

AU - Merkel, Kenneth G.

AU - Woollam, John A

PY - 1989/1/1

Y1 - 1989/1/1

N2 - Variable angle of incidence spectroscopic ellipsometry (VASE) has been implemented as a means of determining layer thickness, alloy composition, and growth quality of GaAs/AlGaAs samples composed of relatively thick layers as well as superlattices. The structures studied in this work contained GaAs/AlGaAs multilayers with a superlattice 舠barrier舡 and were grown for later formation of modulation-doped field effect transistors (MODFETs). Sample modeling was performed by treating the superlattice as a bulk AlGaAs layer of unknown composition. Extremely good data fits were realized when five layer thicknesses and two alloy ratios were allowed to vary in a regression analysis. Room temperature excitonic effects associated with the e-hh(1), e-lh(1) and e-hh(2) transitions were observed in the VASE data.

AB - Variable angle of incidence spectroscopic ellipsometry (VASE) has been implemented as a means of determining layer thickness, alloy composition, and growth quality of GaAs/AlGaAs samples composed of relatively thick layers as well as superlattices. The structures studied in this work contained GaAs/AlGaAs multilayers with a superlattice 舠barrier舡 and were grown for later formation of modulation-doped field effect transistors (MODFETs). Sample modeling was performed by treating the superlattice as a bulk AlGaAs layer of unknown composition. Extremely good data fits were realized when five layer thicknesses and two alloy ratios were allowed to vary in a regression analysis. Room temperature excitonic effects associated with the e-hh(1), e-lh(1) and e-hh(2) transitions were observed in the VASE data.

KW - Ellipsometry

KW - Gaas, algaas multilayer transistors

KW - Layer thicknesses

KW - Spectroscopic

KW - Variable angle

UR - http://www.scopus.com/inward/record.url?scp=0024680813&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0024680813&partnerID=8YFLogxK

U2 - 10.1143/JJAP.28.1118

DO - 10.1143/JJAP.28.1118

M3 - Article

VL - 28

SP - 1118

EP - 1123

JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

SN - 0021-4922

IS - 6 R

ER -