Characterization of GaN grown on SiC on Si/SiO2/Si by metalorganic chemical vapor deposition

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Abstract

SiC (3C-SiC) was grown on the top Si layer of SIMOX (Si/SiO2/Si) by carbonization followed by chemical vapor deposition (CVD). Subsequently, GaN was deposited on the SiC by metalorganic (MO) CVD to produce a GaN/SiC/Si/SiO2Si multilayer structure. This multilayer film was investigated by conventional transmission electron microscopy (TEM) and high-resolution (HR) TEM from cross-sectional view. The GaN layer was found to consist of predominantly hexagonal gallium nitride (h-GaN), and a small fraction of cubic GaN (c-GaN) crystallites. The orientation relationship between most of the h-GaN grains and SiC (3C-SiC) was found to be (0001)GaN∥(111)SiC; [112̄0]GaN∥[11̄0]SiC, while most of the c-GaN grains had an orientation relationship (001)GaN∥(001)SiC; [11̄0]GaN∥[11̄0]SiC with respect to 3C-SiC substrate. The hexagonal grains of GaN were found to grow as two variants. The defects in both h-GaN and c-GaN are also discussed.

Original languageEnglish (US)
Pages (from-to)1171-1174
Number of pages4
JournalJournal of Materials Research
Volume14
Issue number4
DOIs
Publication statusPublished - Apr 1999

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ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

Zhou, W. L., Namavar, F., Colter, P. C., Yoganathan, M., Leksono, M. W., & Pankove, J. I. (1999). Characterization of GaN grown on SiC on Si/SiO2/Si by metalorganic chemical vapor deposition. Journal of Materials Research, 14(4), 1171-1174. https://doi.org/10.1557/JMR.1999.0155