Characterization of GaN grown on SiC on Si/SiO2/Si by metalorganic chemical vapor deposition

W. L. Zhou, F. Namavar, P. C. Colter, M. Yoganathan, M. W. Leksono, J. I. Pankove

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

SiC (3C-SiC) was grown on the top Si layer of SIMOX (Si/SiO2/Si) by carbonization followed by chemical vapor deposition (CVD). Subsequently, GaN was deposited on the SiC by metalorganic (MO) CVD to produce a GaN/SiC/Si/SiO2Si multilayer structure. This multilayer film was investigated by conventional transmission electron microscopy (TEM) and high-resolution (HR) TEM from cross-sectional view. The GaN layer was found to consist of predominantly hexagonal gallium nitride (h-GaN), and a small fraction of cubic GaN (c-GaN) crystallites. The orientation relationship between most of the h-GaN grains and SiC (3C-SiC) was found to be (0001)GaN∥(111)SiC; [112̄0]GaN∥[11̄0]SiC, while most of the c-GaN grains had an orientation relationship (001)GaN∥(001)SiC; [11̄0]GaN∥[11̄0]SiC with respect to 3C-SiC substrate. The hexagonal grains of GaN were found to grow as two variants. The defects in both h-GaN and c-GaN are also discussed.

Original languageEnglish (US)
Pages (from-to)1171-1174
Number of pages4
JournalJournal of Materials Research
Volume14
Issue number4
DOIs
StatePublished - Apr 1999

Fingerprint

Gallium nitride
gallium nitrides
Metallorganic chemical vapor deposition
metalorganic chemical vapor deposition
transmission electron microscopy
carbonization
Multilayer films
Carbonization
High resolution transmission electron microscopy
Crystallites
Crystal orientation
laminates
crystallites
Chemical vapor deposition
Multilayers
vapor deposition
Transmission electron microscopy
Defects
high resolution
defects

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

Zhou, W. L., Namavar, F., Colter, P. C., Yoganathan, M., Leksono, M. W., & Pankove, J. I. (1999). Characterization of GaN grown on SiC on Si/SiO2/Si by metalorganic chemical vapor deposition. Journal of Materials Research, 14(4), 1171-1174. https://doi.org/10.1557/JMR.1999.0155

Characterization of GaN grown on SiC on Si/SiO2/Si by metalorganic chemical vapor deposition. / Zhou, W. L.; Namavar, F.; Colter, P. C.; Yoganathan, M.; Leksono, M. W.; Pankove, J. I.

In: Journal of Materials Research, Vol. 14, No. 4, 04.1999, p. 1171-1174.

Research output: Contribution to journalArticle

Zhou, WL, Namavar, F, Colter, PC, Yoganathan, M, Leksono, MW & Pankove, JI 1999, 'Characterization of GaN grown on SiC on Si/SiO2/Si by metalorganic chemical vapor deposition', Journal of Materials Research, vol. 14, no. 4, pp. 1171-1174. https://doi.org/10.1557/JMR.1999.0155
Zhou, W. L. ; Namavar, F. ; Colter, P. C. ; Yoganathan, M. ; Leksono, M. W. ; Pankove, J. I. / Characterization of GaN grown on SiC on Si/SiO2/Si by metalorganic chemical vapor deposition. In: Journal of Materials Research. 1999 ; Vol. 14, No. 4. pp. 1171-1174.
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