Characterization and applications of arsenic-implanted MOCVD-grown GaAs structures

Fereydoon Namavar, N. Kalkhoran, A. Cremins, S. Vernon

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Arsenic precipitates can be formed in GaAs using arsenic implantation and annealing, thereby producing very high resistivity (surface or buried) GaAs layers. Arsenic-implanted materials are similar to low-temperature (LT) GaAs:As buffer layers grown by molecular beam epitaxy (MBE) which are used for eliminating side- and backgating problems in GaAs circuits. Arsenic implantation is not only a simple and economical technique for device isolation but also can improve the quality of individual devices. Through surface passivation, arsenic implantation can reduce gate-to-drain leakage in and enhance the breakdown voltage of GaAs-based metal semiconductor field-effect transistors (MESFETs) and high electron mobility transistors (HEMTs). High resistivity thin surface layers may be used as gate insulators for GaAs-based metal insulator semiconductor (MIS) FETs, leading to the development of a novel GaAs-based complementary metal insulator semiconductor (CMIS) technology like advanced Si-based complementary metal oxide semiconductor (CMOS) technology but with higher radiation hardness and operational speed.

Original languageEnglish (US)
Title of host publicationMaterials Synthesis and Processing Using Ion Beams
EditorsAnthony F. Garito, Alex K-Y. Jen, Charles Y-C. Lee, Larry R. Dalton
PublisherPubl by Materials Research Society
Pages51-56
Number of pages6
ISBN (Print)1558992154
StatePublished - Jan 1 1994
EventProceedings of the MRS 1993 Fall Meeting - Boston, MA, USA
Duration: Nov 29 1993Dec 3 1993

Publication series

NameMaterials Research Society Symposium Proceedings
Volume316
ISSN (Print)0272-9172

Other

OtherProceedings of the MRS 1993 Fall Meeting
CityBoston, MA, USA
Period11/29/9312/3/93

Fingerprint

Metallorganic chemical vapor deposition
Arsenic
Metals
MESFET devices
Semiconductor materials
High electron mobility transistors
Buffer layers
Field effect transistors
Electric breakdown
Passivation
Molecular beam epitaxy
Precipitates
Hardness
gallium arsenide
Annealing
Radiation
Networks (circuits)
Temperature

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials

Cite this

Namavar, F., Kalkhoran, N., Cremins, A., & Vernon, S. (1994). Characterization and applications of arsenic-implanted MOCVD-grown GaAs structures. In A. F. Garito, A. K-Y. Jen, C. Y-C. Lee, & L. R. Dalton (Eds.), Materials Synthesis and Processing Using Ion Beams (pp. 51-56). (Materials Research Society Symposium Proceedings; Vol. 316). Publ by Materials Research Society.

Characterization and applications of arsenic-implanted MOCVD-grown GaAs structures. / Namavar, Fereydoon; Kalkhoran, N.; Cremins, A.; Vernon, S.

Materials Synthesis and Processing Using Ion Beams. ed. / Anthony F. Garito; Alex K-Y. Jen; Charles Y-C. Lee; Larry R. Dalton. Publ by Materials Research Society, 1994. p. 51-56 (Materials Research Society Symposium Proceedings; Vol. 316).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Namavar, F, Kalkhoran, N, Cremins, A & Vernon, S 1994, Characterization and applications of arsenic-implanted MOCVD-grown GaAs structures. in AF Garito, AK-Y Jen, CY-C Lee & LR Dalton (eds), Materials Synthesis and Processing Using Ion Beams. Materials Research Society Symposium Proceedings, vol. 316, Publ by Materials Research Society, pp. 51-56, Proceedings of the MRS 1993 Fall Meeting, Boston, MA, USA, 11/29/93.
Namavar F, Kalkhoran N, Cremins A, Vernon S. Characterization and applications of arsenic-implanted MOCVD-grown GaAs structures. In Garito AF, Jen AK-Y, Lee CY-C, Dalton LR, editors, Materials Synthesis and Processing Using Ion Beams. Publ by Materials Research Society. 1994. p. 51-56. (Materials Research Society Symposium Proceedings).
Namavar, Fereydoon ; Kalkhoran, N. ; Cremins, A. ; Vernon, S. / Characterization and applications of arsenic-implanted MOCVD-grown GaAs structures. Materials Synthesis and Processing Using Ion Beams. editor / Anthony F. Garito ; Alex K-Y. Jen ; Charles Y-C. Lee ; Larry R. Dalton. Publ by Materials Research Society, 1994. pp. 51-56 (Materials Research Society Symposium Proceedings).
@inproceedings{848c8f211e7a401cb7b828411f9d9a43,
title = "Characterization and applications of arsenic-implanted MOCVD-grown GaAs structures",
abstract = "Arsenic precipitates can be formed in GaAs using arsenic implantation and annealing, thereby producing very high resistivity (surface or buried) GaAs layers. Arsenic-implanted materials are similar to low-temperature (LT) GaAs:As buffer layers grown by molecular beam epitaxy (MBE) which are used for eliminating side- and backgating problems in GaAs circuits. Arsenic implantation is not only a simple and economical technique for device isolation but also can improve the quality of individual devices. Through surface passivation, arsenic implantation can reduce gate-to-drain leakage in and enhance the breakdown voltage of GaAs-based metal semiconductor field-effect transistors (MESFETs) and high electron mobility transistors (HEMTs). High resistivity thin surface layers may be used as gate insulators for GaAs-based metal insulator semiconductor (MIS) FETs, leading to the development of a novel GaAs-based complementary metal insulator semiconductor (CMIS) technology like advanced Si-based complementary metal oxide semiconductor (CMOS) technology but with higher radiation hardness and operational speed.",
author = "Fereydoon Namavar and N. Kalkhoran and A. Cremins and S. Vernon",
year = "1994",
month = "1",
day = "1",
language = "English (US)",
isbn = "1558992154",
series = "Materials Research Society Symposium Proceedings",
publisher = "Publ by Materials Research Society",
pages = "51--56",
editor = "Garito, {Anthony F.} and Jen, {Alex K-Y.} and Lee, {Charles Y-C.} and Dalton, {Larry R.}",
booktitle = "Materials Synthesis and Processing Using Ion Beams",

}

TY - GEN

T1 - Characterization and applications of arsenic-implanted MOCVD-grown GaAs structures

AU - Namavar, Fereydoon

AU - Kalkhoran, N.

AU - Cremins, A.

AU - Vernon, S.

PY - 1994/1/1

Y1 - 1994/1/1

N2 - Arsenic precipitates can be formed in GaAs using arsenic implantation and annealing, thereby producing very high resistivity (surface or buried) GaAs layers. Arsenic-implanted materials are similar to low-temperature (LT) GaAs:As buffer layers grown by molecular beam epitaxy (MBE) which are used for eliminating side- and backgating problems in GaAs circuits. Arsenic implantation is not only a simple and economical technique for device isolation but also can improve the quality of individual devices. Through surface passivation, arsenic implantation can reduce gate-to-drain leakage in and enhance the breakdown voltage of GaAs-based metal semiconductor field-effect transistors (MESFETs) and high electron mobility transistors (HEMTs). High resistivity thin surface layers may be used as gate insulators for GaAs-based metal insulator semiconductor (MIS) FETs, leading to the development of a novel GaAs-based complementary metal insulator semiconductor (CMIS) technology like advanced Si-based complementary metal oxide semiconductor (CMOS) technology but with higher radiation hardness and operational speed.

AB - Arsenic precipitates can be formed in GaAs using arsenic implantation and annealing, thereby producing very high resistivity (surface or buried) GaAs layers. Arsenic-implanted materials are similar to low-temperature (LT) GaAs:As buffer layers grown by molecular beam epitaxy (MBE) which are used for eliminating side- and backgating problems in GaAs circuits. Arsenic implantation is not only a simple and economical technique for device isolation but also can improve the quality of individual devices. Through surface passivation, arsenic implantation can reduce gate-to-drain leakage in and enhance the breakdown voltage of GaAs-based metal semiconductor field-effect transistors (MESFETs) and high electron mobility transistors (HEMTs). High resistivity thin surface layers may be used as gate insulators for GaAs-based metal insulator semiconductor (MIS) FETs, leading to the development of a novel GaAs-based complementary metal insulator semiconductor (CMIS) technology like advanced Si-based complementary metal oxide semiconductor (CMOS) technology but with higher radiation hardness and operational speed.

UR - http://www.scopus.com/inward/record.url?scp=0028202623&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0028202623&partnerID=8YFLogxK

M3 - Conference contribution

SN - 1558992154

T3 - Materials Research Society Symposium Proceedings

SP - 51

EP - 56

BT - Materials Synthesis and Processing Using Ion Beams

A2 - Garito, Anthony F.

A2 - Jen, Alex K-Y.

A2 - Lee, Charles Y-C.

A2 - Dalton, Larry R.

PB - Publ by Materials Research Society

ER -