Carbon nitride thin film synthesized on iron buffer layers

Y. F. Lu, Z. F. He, Z. H. Mai, Z. M. Ren

Research output: Contribution to journalArticle

10 Citations (Scopus)

Abstract

Carbon nitride thin films were deposited on iron buffer layers by pulsed laser deposition assisted with ion implantation. Two types of samples (A) and (B) were prepared with and without iron layers. Several techniques were used to study the properties of the samples. Scanning tunneling microscopy (STM) was used to observe the surface structures of the samples. The difference in their surface morphologies was studied. The STM measurements also provided the relation between tunneling current and bias voltage to study the local density of states of the sample surface by calculating (dI/dV)/(I/V). Three band edges were observed from the calculated curve. Measurements by Raman and Fourier transform infrared (FTIR) spectra were carried out to study the electronic properties of the samples. The Raman spectra showed the presence of triply bonded carbon nitride bonds (C≡N) in sample (A), while only single bonds were observed in sample (B) by FTIR spectra. The mechanical properties were studied by nanoindentation. Both hardness and bulk modulus of the thin films were measured.

Original languageEnglish (US)
Pages (from-to)7095-7098
Number of pages4
JournalJournal of Applied Physics
Volume88
Issue number12
DOIs
StatePublished - Dec 15 2000

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carbon nitrides
buffers
iron
thin films
scanning tunneling microscopy
infrared spectra
nanoindentation
bulk modulus
pulsed laser deposition
ion implantation
hardness
mechanical properties
Raman spectra
electric potential
curves
electronics

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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Carbon nitride thin film synthesized on iron buffer layers. / Lu, Y. F.; He, Z. F.; Mai, Z. H.; Ren, Z. M.

In: Journal of Applied Physics, Vol. 88, No. 12, 15.12.2000, p. 7095-7098.

Research output: Contribution to journalArticle

Lu, Y. F. ; He, Z. F. ; Mai, Z. H. ; Ren, Z. M. / Carbon nitride thin film synthesized on iron buffer layers. In: Journal of Applied Physics. 2000 ; Vol. 88, No. 12. pp. 7095-7098.
@article{a4c620b731a340bfa8e1256cbd7ad23f,
title = "Carbon nitride thin film synthesized on iron buffer layers",
abstract = "Carbon nitride thin films were deposited on iron buffer layers by pulsed laser deposition assisted with ion implantation. Two types of samples (A) and (B) were prepared with and without iron layers. Several techniques were used to study the properties of the samples. Scanning tunneling microscopy (STM) was used to observe the surface structures of the samples. The difference in their surface morphologies was studied. The STM measurements also provided the relation between tunneling current and bias voltage to study the local density of states of the sample surface by calculating (dI/dV)/(I/V). Three band edges were observed from the calculated curve. Measurements by Raman and Fourier transform infrared (FTIR) spectra were carried out to study the electronic properties of the samples. The Raman spectra showed the presence of triply bonded carbon nitride bonds (C≡N) in sample (A), while only single bonds were observed in sample (B) by FTIR spectra. The mechanical properties were studied by nanoindentation. Both hardness and bulk modulus of the thin films were measured.",
author = "Lu, {Y. F.} and He, {Z. F.} and Mai, {Z. H.} and Ren, {Z. M.}",
year = "2000",
month = "12",
day = "15",
doi = "10.1063/1.1323750",
language = "English (US)",
volume = "88",
pages = "7095--7098",
journal = "Journal of Applied Physics",
issn = "0021-8979",
publisher = "American Institute of Physics Publising LLC",
number = "12",

}

TY - JOUR

T1 - Carbon nitride thin film synthesized on iron buffer layers

AU - Lu, Y. F.

AU - He, Z. F.

AU - Mai, Z. H.

AU - Ren, Z. M.

PY - 2000/12/15

Y1 - 2000/12/15

N2 - Carbon nitride thin films were deposited on iron buffer layers by pulsed laser deposition assisted with ion implantation. Two types of samples (A) and (B) were prepared with and without iron layers. Several techniques were used to study the properties of the samples. Scanning tunneling microscopy (STM) was used to observe the surface structures of the samples. The difference in their surface morphologies was studied. The STM measurements also provided the relation between tunneling current and bias voltage to study the local density of states of the sample surface by calculating (dI/dV)/(I/V). Three band edges were observed from the calculated curve. Measurements by Raman and Fourier transform infrared (FTIR) spectra were carried out to study the electronic properties of the samples. The Raman spectra showed the presence of triply bonded carbon nitride bonds (C≡N) in sample (A), while only single bonds were observed in sample (B) by FTIR spectra. The mechanical properties were studied by nanoindentation. Both hardness and bulk modulus of the thin films were measured.

AB - Carbon nitride thin films were deposited on iron buffer layers by pulsed laser deposition assisted with ion implantation. Two types of samples (A) and (B) were prepared with and without iron layers. Several techniques were used to study the properties of the samples. Scanning tunneling microscopy (STM) was used to observe the surface structures of the samples. The difference in their surface morphologies was studied. The STM measurements also provided the relation between tunneling current and bias voltage to study the local density of states of the sample surface by calculating (dI/dV)/(I/V). Three band edges were observed from the calculated curve. Measurements by Raman and Fourier transform infrared (FTIR) spectra were carried out to study the electronic properties of the samples. The Raman spectra showed the presence of triply bonded carbon nitride bonds (C≡N) in sample (A), while only single bonds were observed in sample (B) by FTIR spectra. The mechanical properties were studied by nanoindentation. Both hardness and bulk modulus of the thin films were measured.

UR - http://www.scopus.com/inward/record.url?scp=2142762375&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=2142762375&partnerID=8YFLogxK

U2 - 10.1063/1.1323750

DO - 10.1063/1.1323750

M3 - Article

AN - SCOPUS:2142762375

VL - 88

SP - 7095

EP - 7098

JO - Journal of Applied Physics

JF - Journal of Applied Physics

SN - 0021-8979

IS - 12

ER -