Bulk and surface 4f states of Gd

R. Sabiryanov, S. Jaswal

Research output: Contribution to journalArticle

15 Citations (Scopus)

Abstract

Self-consistent spin-polarized electronic-structure calculations for a seven-layer slab are carried out to find the positions of the highly localized 4f surface and bulk bands of Gd. The 4f states are treated as valence states along with s, p, and d orbitals. Both the occupied and unoccupied 4f bands shift down in energy with respect to the bulk bands. The calculated shifts with different approximations are compared with the photoemission and inverse photoemission data. The results based on local-density +U approximation are in very good agreement with the experimental shift of 0.4 eV for both the occupied and unoccupied states.

Original languageEnglish (US)
Pages (from-to)4117-4119
Number of pages3
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume55
Issue number7
DOIs
StatePublished - Jan 1 1997

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Surface states
Photoemission
Local density approximation
shift
photoelectric emission
Electronic structure
approximation
slabs
electronic structure
valence
orbitals
energy

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Cite this

Bulk and surface 4f states of Gd. / Sabiryanov, R.; Jaswal, S.

In: Physical Review B - Condensed Matter and Materials Physics, Vol. 55, No. 7, 01.01.1997, p. 4117-4119.

Research output: Contribution to journalArticle

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