Bistable memory effect in chromium oxide junctions

A. Sokolov, C. S. Yang, E. Ovtchenkov, L. Yuan, Sy-Hwang Liou, B. Doudin

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

Magnetotransport properties of granular CrO 2/Cr 2O 3 films made of CrO 2 crystals covered by 1-2 nm native insulating Cr 2O 3 are presented. Electrical properties of a limited number of grains measured in series and parallel (10 to 15 grains) reveal intergrain tunneling characteristics. At lowest temperatures, a well pronounced zero bias anomaly indicates that impurities in the junctions block the electronic flow. Hysteresis in the IV curves are observed at intermediate temperatures on zero-field cooled samples. Changing the polarity of a short excitation pulse (100ns) of amplitude smaller than 1 V triggers a change in the zero-bias resistance by 10-50%. These states are stable and well reproducible in the temperature interval ranging from 100K to 250K. Applying an external magnetic field cancels the IV hysteresis. The resistance of the devices in the kΩ range, the potential high-speed for writing and reading the resistance sate, make these systems interesting candidates for magnetic non-volatile memories.

Original languageEnglish (US)
Title of host publicationMaterials Research Society Symposium - Proceedings
EditorsS. Zhang, W. Kuch, G. Guntherodt, C. Broholm, A.D. Kent
Pages139-144
Number of pages6
Volume746
StatePublished - 2002
EventMagnoelectronics and Magnetic Materials - Novel Phenomena and Advanced Characterization - Boston, MA, United States
Duration: Dec 1 2002Dec 5 2002

Other

OtherMagnoelectronics and Magnetic Materials - Novel Phenomena and Advanced Characterization
CountryUnited States
CityBoston, MA
Period12/1/0212/5/02

Fingerprint

Chromium
Data storage equipment
Oxides
Hysteresis
Galvanomagnetic effects
Temperature
Electric properties
Impurities
Magnetic fields
Crystals
chromium oxide

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials

Cite this

Sokolov, A., Yang, C. S., Ovtchenkov, E., Yuan, L., Liou, S-H., & Doudin, B. (2002). Bistable memory effect in chromium oxide junctions. In S. Zhang, W. Kuch, G. Guntherodt, C. Broholm, & A. D. Kent (Eds.), Materials Research Society Symposium - Proceedings (Vol. 746, pp. 139-144)

Bistable memory effect in chromium oxide junctions. / Sokolov, A.; Yang, C. S.; Ovtchenkov, E.; Yuan, L.; Liou, Sy-Hwang; Doudin, B.

Materials Research Society Symposium - Proceedings. ed. / S. Zhang; W. Kuch; G. Guntherodt; C. Broholm; A.D. Kent. Vol. 746 2002. p. 139-144.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Sokolov, A, Yang, CS, Ovtchenkov, E, Yuan, L, Liou, S-H & Doudin, B 2002, Bistable memory effect in chromium oxide junctions. in S Zhang, W Kuch, G Guntherodt, C Broholm & AD Kent (eds), Materials Research Society Symposium - Proceedings. vol. 746, pp. 139-144, Magnoelectronics and Magnetic Materials - Novel Phenomena and Advanced Characterization, Boston, MA, United States, 12/1/02.
Sokolov A, Yang CS, Ovtchenkov E, Yuan L, Liou S-H, Doudin B. Bistable memory effect in chromium oxide junctions. In Zhang S, Kuch W, Guntherodt G, Broholm C, Kent AD, editors, Materials Research Society Symposium - Proceedings. Vol. 746. 2002. p. 139-144
Sokolov, A. ; Yang, C. S. ; Ovtchenkov, E. ; Yuan, L. ; Liou, Sy-Hwang ; Doudin, B. / Bistable memory effect in chromium oxide junctions. Materials Research Society Symposium - Proceedings. editor / S. Zhang ; W. Kuch ; G. Guntherodt ; C. Broholm ; A.D. Kent. Vol. 746 2002. pp. 139-144
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