Bending in HVPE GaN free-standing films: Effects of laser lift-off, polishing and high-pressure annealing

T. Paskova, V. Darakchieva, P. P. Paskov, B. Monemar, M. Bukowski, T. Suski, N. Ashkenov, M. Schubert, D. Hommel

Research output: Contribution to journalConference article

3 Citations (Scopus)

Abstract

We have studied the effects of laser lift-off and polishing processes on the bending of free-standing HVPE grown GaN thick films. Their structural characteristics were accessed by reciprocal space mapping and lattice parameters measurements as well as by Raman scattering and photoluminescence. The in-plane strain difference between the two faces was found to have determining effect on the bending of the free-standing films. Removing the high-defect-density near-interface region either by melting caused by laser lift-off, or by polishing, or by point defects dissociation caused by high-pressure annealing was found to lead to flattening of the strain distribution along the film thickness and a significant reduction of the bending of the free-standing films.

Original languageEnglish (US)
Pages (from-to)1475-1478
Number of pages4
JournalPhysica Status Solidi (C) Current Topics in Solid State Physics
Volume3
DOIs
StatePublished - Jul 31 2006
Event6th International Conference on Nitride Semiconductors, ICNS-6 - Bremen, Germany
Duration: Aug 28 2005Sep 2 2005

Fingerprint

polishing
annealing
lasers
strain distribution
plane strain
flattening
point defects
thick films
lattice parameters
film thickness
melting
dissociation
Raman spectra
photoluminescence
defects

ASJC Scopus subject areas

  • Condensed Matter Physics

Cite this

Bending in HVPE GaN free-standing films : Effects of laser lift-off, polishing and high-pressure annealing. / Paskova, T.; Darakchieva, V.; Paskov, P. P.; Monemar, B.; Bukowski, M.; Suski, T.; Ashkenov, N.; Schubert, M.; Hommel, D.

In: Physica Status Solidi (C) Current Topics in Solid State Physics, Vol. 3, 31.07.2006, p. 1475-1478.

Research output: Contribution to journalConference article

Paskova, T. ; Darakchieva, V. ; Paskov, P. P. ; Monemar, B. ; Bukowski, M. ; Suski, T. ; Ashkenov, N. ; Schubert, M. ; Hommel, D. / Bending in HVPE GaN free-standing films : Effects of laser lift-off, polishing and high-pressure annealing. In: Physica Status Solidi (C) Current Topics in Solid State Physics. 2006 ; Vol. 3. pp. 1475-1478.
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AU - Monemar, B.

AU - Bukowski, M.

AU - Suski, T.

AU - Ashkenov, N.

AU - Schubert, M.

AU - Hommel, D.

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