Band-to-band transitions and optical properties of MgxZn 1-xO (0 ≤ x ≤ 1) films

R. Schmidt-Grund, D. Fritsch, Mathias Schubert, B. Rheinländer, H. Schmidt, H. Hochmut, M. Lorenz, D. Spemann, C. M. Herzinger, M. Grundmann

Research output: Chapter in Book/Report/Conference proceedingConference contribution

8 Citations (Scopus)

Abstract

The energies of E0-, E3-, and E5-type band-to-band transitions of pulsed-laser-deposition (PLD) grown Mg xZn1-xO (0 ≤ x ≤ 1) films have been determined using spectroscopic ellipsometry and compared with transition energies computed by empirical pseudopotential band-structure calculations. While the samples with x ≤ 0.53 are wurtzite-type, the samples with higher Mg content have rocksalt-structure.

Original languageEnglish (US)
Title of host publicationPHYSICS OF SEMICONDUCTORS
Subtitle of host publication27th International Conference on the Physics of Semiconductors, ICPS-27
Pages201-202
Number of pages2
DOIs
StatePublished - Jun 30 2005
Externally publishedYes
EventPHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors, ICPS-27 - Flagstaff, AZ, United States
Duration: Jul 26 2004Jul 30 2004

Publication series

NameAIP Conference Proceedings
Volume772
ISSN (Print)0094-243X
ISSN (Electronic)1551-7616

Other

OtherPHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors, ICPS-27
CountryUnited States
CityFlagstaff, AZ
Period7/26/047/30/04

Fingerprint

optical properties
wurtzite
pseudopotentials
ellipsometry
pulsed laser deposition
energy

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

Schmidt-Grund, R., Fritsch, D., Schubert, M., Rheinländer, B., Schmidt, H., Hochmut, H., ... Grundmann, M. (2005). Band-to-band transitions and optical properties of MgxZn 1-xO (0 ≤ x ≤ 1) films. In PHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors, ICPS-27 (pp. 201-202). (AIP Conference Proceedings; Vol. 772). https://doi.org/10.1063/1.1994063

Band-to-band transitions and optical properties of MgxZn 1-xO (0 ≤ x ≤ 1) films. / Schmidt-Grund, R.; Fritsch, D.; Schubert, Mathias; Rheinländer, B.; Schmidt, H.; Hochmut, H.; Lorenz, M.; Spemann, D.; Herzinger, C. M.; Grundmann, M.

PHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors, ICPS-27. 2005. p. 201-202 (AIP Conference Proceedings; Vol. 772).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Schmidt-Grund, R, Fritsch, D, Schubert, M, Rheinländer, B, Schmidt, H, Hochmut, H, Lorenz, M, Spemann, D, Herzinger, CM & Grundmann, M 2005, Band-to-band transitions and optical properties of MgxZn 1-xO (0 ≤ x ≤ 1) films. in PHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors, ICPS-27. AIP Conference Proceedings, vol. 772, pp. 201-202, PHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors, ICPS-27, Flagstaff, AZ, United States, 7/26/04. https://doi.org/10.1063/1.1994063
Schmidt-Grund R, Fritsch D, Schubert M, Rheinländer B, Schmidt H, Hochmut H et al. Band-to-band transitions and optical properties of MgxZn 1-xO (0 ≤ x ≤ 1) films. In PHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors, ICPS-27. 2005. p. 201-202. (AIP Conference Proceedings). https://doi.org/10.1063/1.1994063
Schmidt-Grund, R. ; Fritsch, D. ; Schubert, Mathias ; Rheinländer, B. ; Schmidt, H. ; Hochmut, H. ; Lorenz, M. ; Spemann, D. ; Herzinger, C. M. ; Grundmann, M. / Band-to-band transitions and optical properties of MgxZn 1-xO (0 ≤ x ≤ 1) films. PHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors, ICPS-27. 2005. pp. 201-202 (AIP Conference Proceedings).
@inproceedings{6e8bf05feb8f40508864c5a4f1566357,
title = "Band-to-band transitions and optical properties of MgxZn 1-xO (0 ≤ x ≤ 1) films",
abstract = "The energies of E0-, E3-, and E5-type band-to-band transitions of pulsed-laser-deposition (PLD) grown Mg xZn1-xO (0 ≤ x ≤ 1) films have been determined using spectroscopic ellipsometry and compared with transition energies computed by empirical pseudopotential band-structure calculations. While the samples with x ≤ 0.53 are wurtzite-type, the samples with higher Mg content have rocksalt-structure.",
author = "R. Schmidt-Grund and D. Fritsch and Mathias Schubert and B. Rheinl{\"a}nder and H. Schmidt and H. Hochmut and M. Lorenz and D. Spemann and Herzinger, {C. M.} and M. Grundmann",
year = "2005",
month = "6",
day = "30",
doi = "10.1063/1.1994063",
language = "English (US)",
isbn = "0735402574",
series = "AIP Conference Proceedings",
pages = "201--202",
booktitle = "PHYSICS OF SEMICONDUCTORS",

}

TY - GEN

T1 - Band-to-band transitions and optical properties of MgxZn 1-xO (0 ≤ x ≤ 1) films

AU - Schmidt-Grund, R.

AU - Fritsch, D.

AU - Schubert, Mathias

AU - Rheinländer, B.

AU - Schmidt, H.

AU - Hochmut, H.

AU - Lorenz, M.

AU - Spemann, D.

AU - Herzinger, C. M.

AU - Grundmann, M.

PY - 2005/6/30

Y1 - 2005/6/30

N2 - The energies of E0-, E3-, and E5-type band-to-band transitions of pulsed-laser-deposition (PLD) grown Mg xZn1-xO (0 ≤ x ≤ 1) films have been determined using spectroscopic ellipsometry and compared with transition energies computed by empirical pseudopotential band-structure calculations. While the samples with x ≤ 0.53 are wurtzite-type, the samples with higher Mg content have rocksalt-structure.

AB - The energies of E0-, E3-, and E5-type band-to-band transitions of pulsed-laser-deposition (PLD) grown Mg xZn1-xO (0 ≤ x ≤ 1) films have been determined using spectroscopic ellipsometry and compared with transition energies computed by empirical pseudopotential band-structure calculations. While the samples with x ≤ 0.53 are wurtzite-type, the samples with higher Mg content have rocksalt-structure.

UR - http://www.scopus.com/inward/record.url?scp=33645513336&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=33645513336&partnerID=8YFLogxK

U2 - 10.1063/1.1994063

DO - 10.1063/1.1994063

M3 - Conference contribution

SN - 0735402574

SN - 9780735402577

T3 - AIP Conference Proceedings

SP - 201

EP - 202

BT - PHYSICS OF SEMICONDUCTORS

ER -