Ballistic Anisotropic Magnetoresistance

J. Velev, Renat F Sabirianov, S. S. Jaswal, E. Y. Tsymbal

Research output: Contribution to journalArticle

92 Citations (Scopus)

Abstract

Electronic transport in ferromagnetic ballistic conductors is predicted to exhibit ballistic anisotropic magnetoresistance - a change in the ballistic conductance with the direction of magnetization. This phenomenon originates from the effect of the spin-orbit interaction on the electronic band structure which leads to a change in the number of bands crossing the Fermi energy when the magnetization direction changes. We illustrate the significance of this phenomenon by performing ab initio calculations of the ballistic conductance in ferromagnetic Ni and Fe nanowires which display a sizable ballistic anisotropic magnetoresistance when magnetization changes direction from parallel to perpendicular to the wire axis.

Original languageEnglish (US)
Article number127203
JournalPhysical Review Letters
Volume94
Issue number12
DOIs
StatePublished - Apr 1 2005

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ballistics
magnetization
spin-orbit interactions
electronics
nanowires
conductors
wire
energy

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

Ballistic Anisotropic Magnetoresistance. / Velev, J.; Sabirianov, Renat F; Jaswal, S. S.; Tsymbal, E. Y.

In: Physical Review Letters, Vol. 94, No. 12, 127203, 01.04.2005.

Research output: Contribution to journalArticle

Velev, J. ; Sabirianov, Renat F ; Jaswal, S. S. ; Tsymbal, E. Y. / Ballistic Anisotropic Magnetoresistance. In: Physical Review Letters. 2005 ; Vol. 94, No. 12.
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