Assessing structural, free-charge carrier, and phonon properties of mixed-phase epitaxial films: The case of InN

M. Y. Xie, M. Schubert, J. Lu, P. O.A. Persson, V. Stanishev, C. L. Hsiao, L. C. Chen, W. J. Schaff, V. Darakchieva

Research output: Contribution to journalArticle

7 Citations (Scopus)

Abstract

We develop and discuss appropriate methods based on x-ray diffraction and generalized infrared spectroscopic ellipsometry to identify wurtizte and zinc-blende polymorphs, and quantify their volume fractions in mixed-phase epitaxial films taking InN as an example. The spectral signatures occurring in the azimuth polarization (Müller matrix) maps of mixed-phase epitaxial InN films are discussed and explained in view of polymorphism (zinc-blende versus wurtzite), volume fraction of different polymorphs and their crystallographic orientation, and azimuth angle. A comprehensive study of the structural, phonon and free electron properties of zinc-blende InN films containing inclusions of wurtzite InN is also presented. Thorough analysis on the formation of the zinc-blende and wurtzite phases is given and the structural evolution with film thickness is discussed in detail. The phonon properties of the two phases are determined and discussed together with the determination of the bulk free-charge carrier concentration, and electron accumulation at the mixed-phase InN film surfaces.

Original languageEnglish (US)
Article number195306
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume90
Issue number19
DOIs
StatePublished - Nov 14 2014

Fingerprint

Epitaxial films
Charge carriers
Zinc
charge carriers
zinc
Polymorphism
wurtzite
azimuth
Volume fraction
electrons
spectral signatures
Spectroscopic ellipsometry
Electrons
polymorphism
free electrons
ellipsometry
Carrier concentration
Film thickness
x ray diffraction
film thickness

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Cite this

Assessing structural, free-charge carrier, and phonon properties of mixed-phase epitaxial films : The case of InN. / Xie, M. Y.; Schubert, M.; Lu, J.; Persson, P. O.A.; Stanishev, V.; Hsiao, C. L.; Chen, L. C.; Schaff, W. J.; Darakchieva, V.

In: Physical Review B - Condensed Matter and Materials Physics, Vol. 90, No. 19, 195306, 14.11.2014.

Research output: Contribution to journalArticle

Xie, M. Y. ; Schubert, M. ; Lu, J. ; Persson, P. O.A. ; Stanishev, V. ; Hsiao, C. L. ; Chen, L. C. ; Schaff, W. J. ; Darakchieva, V. / Assessing structural, free-charge carrier, and phonon properties of mixed-phase epitaxial films : The case of InN. In: Physical Review B - Condensed Matter and Materials Physics. 2014 ; Vol. 90, No. 19.
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AU - Schubert, M.

AU - Lu, J.

AU - Persson, P. O.A.

AU - Stanishev, V.

AU - Hsiao, C. L.

AU - Chen, L. C.

AU - Schaff, W. J.

AU - Darakchieva, V.

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