Arsenic implantation into GaAs

a SOI technology for compound semiconductors?

Zuzanna Liliental-Weber, Fereydoon Namavar, A. Claverie

Research output: Contribution to journalArticle

9 Citations (Scopus)

Abstract

Solid-phase epitaxial regrowth of As+-implanted GaAs has produced As precipitates with the same structure and orientation relationship as has been observed in annealed GaAs layers grown at low temperature by molecular-beam epitaxy. The presence of these precipitates was revealed by transmission electron microscopy. These layers appear to be semi-insulating. In order to obtain these results, implantation and annealing conditions need to be carefully selected. Annealing of implanted samples at 600°C for 10, 20 and 30 min does not lead to the undulation of the sample surface. Therefore any device structures such as semiconductor-on-insulator can be grown on this regrown material.

Original languageEnglish (US)
Pages (from-to)570-574
Number of pages5
JournalUltramicroscopy
Volume52
Issue number3-4
DOIs
StatePublished - Jan 1 1993

Fingerprint

SOI (semiconductors)
Arsenic
arsenic
Ion implantation
Precipitates
precipitates
implantation
Annealing
Semiconductor materials
annealing
Molecular beam epitaxy
solid phases
molecular beam epitaxy
insulators
Transmission electron microscopy
transmission electron microscopy
Temperature
gallium arsenide

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Instrumentation

Cite this

Arsenic implantation into GaAs : a SOI technology for compound semiconductors? / Liliental-Weber, Zuzanna; Namavar, Fereydoon; Claverie, A.

In: Ultramicroscopy, Vol. 52, No. 3-4, 01.01.1993, p. 570-574.

Research output: Contribution to journalArticle

Liliental-Weber, Zuzanna ; Namavar, Fereydoon ; Claverie, A. / Arsenic implantation into GaAs : a SOI technology for compound semiconductors?. In: Ultramicroscopy. 1993 ; Vol. 52, No. 3-4. pp. 570-574.
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