Application of IR variable angle spectroscopic ellipsometry to the determination of free carrier concentration depth profiles

Thomas E. Tiwald, Daniel W. Thompson, John A. Woollam, Wayne Paulson, Robert Hance

Research output: Contribution to journalArticle

83 Citations (Scopus)

Abstract

Free carrier concentration profiles were determined by Fourier Transform Infrared (FTIR) variable angle spectroscopic ellipsometry. The technique exploits carrier absorption in the mid-infrared spectral range and combines the sensitivity of ellipsometry with a simple Drude free carrier absorption model to determine the carrier profile. In this study, the carrier profiles were modeled as graded multilayers that were constrained to a specific functional form (e.g. Gaussian, complementary error function) when appropriate. Carrier profiles from boron and arsenic ion-implanted that had been subjected to furnace or Rapid Thermal Annealing (RTA) annealed silicon wafers were compared to Spreading Resistance Probe and Secondary Ion Mass Spectrometry profiles. p - p + doped epitaxial silicon samples (before and after annealing) were also measured and the results were compared to theory.

Original languageEnglish (US)
Pages (from-to)661-666
Number of pages6
JournalThin Solid Films
Volume313-314
DOIs
StatePublished - Feb 13 1998

Fingerprint

Spectroscopic ellipsometry
ellipsometry
Carrier concentration
Infrared radiation
Boron
Rapid thermal annealing
Ellipsometry
Arsenic
Silicon
Secondary ion mass spectrometry
profiles
Silicon wafers
Fourier transforms
Multilayers
Furnaces
Annealing
Ions
error functions
annealing
silicon

Keywords

  • Dopant distribution
  • Free carrier absorption
  • Infrared ellipsometry
  • Semiconductors

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

Cite this

Application of IR variable angle spectroscopic ellipsometry to the determination of free carrier concentration depth profiles. / Tiwald, Thomas E.; Thompson, Daniel W.; Woollam, John A.; Paulson, Wayne; Hance, Robert.

In: Thin Solid Films, Vol. 313-314, 13.02.1998, p. 661-666.

Research output: Contribution to journalArticle

Tiwald, Thomas E. ; Thompson, Daniel W. ; Woollam, John A. ; Paulson, Wayne ; Hance, Robert. / Application of IR variable angle spectroscopic ellipsometry to the determination of free carrier concentration depth profiles. In: Thin Solid Films. 1998 ; Vol. 313-314. pp. 661-666.
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