Anomalous Hall effect and electron transport in ferromagnetic MnBi films

P. Kharel, David J Sellmyer

Research output: Contribution to journalArticle

8 Citations (Scopus)

Abstract

The electron transport properties of highly c-axis oriented MnBi thin films of various thicknesses have been investigated. Samples are metallic but the low temperature resistivity shows an unusual T3 dependence. Transverse Hall effect measurements show that both the ordinary and anomalous Hall coefficients decrease with decreasing temperature below 300K, but the ordinary Hall coefficient (R0) undergoes a sign reversal around 105K, where the magnetic anisotropy also changes sign. Analysis of the Hall data for various samples shows that the anomalous Hall coefficient (Rs) exhibits a strong 2 dependence, where is the longitudinal resistivity.

Original languageEnglish (US)
Article number426001
JournalJournal of Physics Condensed Matter
Volume23
Issue number42
DOIs
StatePublished - Oct 26 2011

Fingerprint

ferromagnetic films
Hall effect
Electron transport properties
Magnetic anisotropy
electrons
Thin films
Temperature
electrical resistivity
transport properties
anisotropy
Electron Transport
thin films
temperature

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics

Cite this

Anomalous Hall effect and electron transport in ferromagnetic MnBi films. / Kharel, P.; Sellmyer, David J.

In: Journal of Physics Condensed Matter, Vol. 23, No. 42, 426001, 26.10.2011.

Research output: Contribution to journalArticle

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