Anisotropy of boron nitride thin-film reflectivity spectra by generalized ellipsometry

M. Schubert, B. Rheinländer, E. Franke, H. Neumann, J. Hahn, M. Rôder, F. Richter

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Abstract

Generalized variable angle spectroscopic ellipsometry (gVASE) over the photon energy range from 1.5 to 3.5 eV has been used to study and distinguish the hexagonal and cubic phases of boron nitride in thin films (50-500 nm) deposited by magnetron sputtering onto (100) silicon. Furthermore, gVASE is used to characterize the anisotropic reflectivity of the hexagonal phase films with different microstructures.

Original languageEnglish (US)
Pages (from-to)1819-1821
Number of pages3
JournalApplied Physics Letters
Volume70
Issue number14
DOIs
StatePublished - Apr 7 1997

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ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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Schubert, M., Rheinländer, B., Franke, E., Neumann, H., Hahn, J., Rôder, M., & Richter, F. (1997). Anisotropy of boron nitride thin-film reflectivity spectra by generalized ellipsometry. Applied Physics Letters, 70(14), 1819-1821. https://doi.org/10.1063/1.118701