Anisotropic strain and phonon deformation potentials in GaN

V. Darakchieva, T. Paskova, M. Schubert, H. Arwin, P. P. Paskov, B. Monemar, D. Hommel, M. Heuken, J. Off, F. Scholz, B. A. Haskell, P. T. Fini, J. S. Speck, S. Nakamura

Research output: Contribution to journalArticle

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Abstract

We report optical phonon frequency studies in anisotropically strained c -plane- and a -plane-oriented GaN films by generalized infrared spectroscopic ellipsometry and Raman scattering spectroscopy. The anisotropic strain in the films is obtained from high-resolution x-ray diffraction measurements. Experimental evidence for splitting of the GaN E1 (TO), E1 (LO), and E2 phonons under anisotropic strain in the basal plane is presented, and their phonon deformation potentials c E1 (TO), c E1 (LO), and c E2 are determined. A distinct correlation between anisotropic strain and the A1 (TO) and E1 (LO) frequencies of a -plane GaN films reveals the a A1 (TO), b A1 (TO), a E1 (LO), and b E1 (LO) phonon deformation potentials. The a A1 (TO) and b A1 (TO) are found to be in very good agreement with previous results from Raman experiments. Our a A1 (TO) and a E1 (LO) phonon deformation potentials agree well with recently reported theoretical estimations, while b A1 (TO) and b E1 (LO) are found to be significantly larger than the theoretical values. A discussion of the observed differences is presented.

Original languageEnglish (US)
Article number195217
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume75
Issue number19
DOIs
StatePublished - May 29 2007

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Spectroscopic ellipsometry
Phonons
ellipsometry
Raman scattering
phonons
x ray diffraction
Diffraction
Spectroscopy
Raman spectra
Infrared radiation
X rays
high resolution
scattering
spectroscopy
Experiments

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Cite this

Darakchieva, V., Paskova, T., Schubert, M., Arwin, H., Paskov, P. P., Monemar, B., ... Nakamura, S. (2007). Anisotropic strain and phonon deformation potentials in GaN. Physical Review B - Condensed Matter and Materials Physics, 75(19), [195217]. https://doi.org/10.1103/PhysRevB.75.195217

Anisotropic strain and phonon deformation potentials in GaN. / Darakchieva, V.; Paskova, T.; Schubert, M.; Arwin, H.; Paskov, P. P.; Monemar, B.; Hommel, D.; Heuken, M.; Off, J.; Scholz, F.; Haskell, B. A.; Fini, P. T.; Speck, J. S.; Nakamura, S.

In: Physical Review B - Condensed Matter and Materials Physics, Vol. 75, No. 19, 195217, 29.05.2007.

Research output: Contribution to journalArticle

Darakchieva, V, Paskova, T, Schubert, M, Arwin, H, Paskov, PP, Monemar, B, Hommel, D, Heuken, M, Off, J, Scholz, F, Haskell, BA, Fini, PT, Speck, JS & Nakamura, S 2007, 'Anisotropic strain and phonon deformation potentials in GaN', Physical Review B - Condensed Matter and Materials Physics, vol. 75, no. 19, 195217. https://doi.org/10.1103/PhysRevB.75.195217
Darakchieva, V. ; Paskova, T. ; Schubert, M. ; Arwin, H. ; Paskov, P. P. ; Monemar, B. ; Hommel, D. ; Heuken, M. ; Off, J. ; Scholz, F. ; Haskell, B. A. ; Fini, P. T. ; Speck, J. S. ; Nakamura, S. / Anisotropic strain and phonon deformation potentials in GaN. In: Physical Review B - Condensed Matter and Materials Physics. 2007 ; Vol. 75, No. 19.
@article{d82f1ab5dbdf42b0b295151a4483e89a,
title = "Anisotropic strain and phonon deformation potentials in GaN",
abstract = "We report optical phonon frequency studies in anisotropically strained c -plane- and a -plane-oriented GaN films by generalized infrared spectroscopic ellipsometry and Raman scattering spectroscopy. The anisotropic strain in the films is obtained from high-resolution x-ray diffraction measurements. Experimental evidence for splitting of the GaN E1 (TO), E1 (LO), and E2 phonons under anisotropic strain in the basal plane is presented, and their phonon deformation potentials c E1 (TO), c E1 (LO), and c E2 are determined. A distinct correlation between anisotropic strain and the A1 (TO) and E1 (LO) frequencies of a -plane GaN films reveals the a A1 (TO), b A1 (TO), a E1 (LO), and b E1 (LO) phonon deformation potentials. The a A1 (TO) and b A1 (TO) are found to be in very good agreement with previous results from Raman experiments. Our a A1 (TO) and a E1 (LO) phonon deformation potentials agree well with recently reported theoretical estimations, while b A1 (TO) and b E1 (LO) are found to be significantly larger than the theoretical values. A discussion of the observed differences is presented.",
author = "V. Darakchieva and T. Paskova and M. Schubert and H. Arwin and Paskov, {P. P.} and B. Monemar and D. Hommel and M. Heuken and J. Off and F. Scholz and Haskell, {B. A.} and Fini, {P. T.} and Speck, {J. S.} and S. Nakamura",
year = "2007",
month = "5",
day = "29",
doi = "10.1103/PhysRevB.75.195217",
language = "English (US)",
volume = "75",
journal = "Physical Review B-Condensed Matter",
issn = "1098-0121",
publisher = "American Institute of Physics Publising LLC",
number = "19",

}

TY - JOUR

T1 - Anisotropic strain and phonon deformation potentials in GaN

AU - Darakchieva, V.

AU - Paskova, T.

AU - Schubert, M.

AU - Arwin, H.

AU - Paskov, P. P.

AU - Monemar, B.

AU - Hommel, D.

AU - Heuken, M.

AU - Off, J.

AU - Scholz, F.

AU - Haskell, B. A.

AU - Fini, P. T.

AU - Speck, J. S.

AU - Nakamura, S.

PY - 2007/5/29

Y1 - 2007/5/29

N2 - We report optical phonon frequency studies in anisotropically strained c -plane- and a -plane-oriented GaN films by generalized infrared spectroscopic ellipsometry and Raman scattering spectroscopy. The anisotropic strain in the films is obtained from high-resolution x-ray diffraction measurements. Experimental evidence for splitting of the GaN E1 (TO), E1 (LO), and E2 phonons under anisotropic strain in the basal plane is presented, and their phonon deformation potentials c E1 (TO), c E1 (LO), and c E2 are determined. A distinct correlation between anisotropic strain and the A1 (TO) and E1 (LO) frequencies of a -plane GaN films reveals the a A1 (TO), b A1 (TO), a E1 (LO), and b E1 (LO) phonon deformation potentials. The a A1 (TO) and b A1 (TO) are found to be in very good agreement with previous results from Raman experiments. Our a A1 (TO) and a E1 (LO) phonon deformation potentials agree well with recently reported theoretical estimations, while b A1 (TO) and b E1 (LO) are found to be significantly larger than the theoretical values. A discussion of the observed differences is presented.

AB - We report optical phonon frequency studies in anisotropically strained c -plane- and a -plane-oriented GaN films by generalized infrared spectroscopic ellipsometry and Raman scattering spectroscopy. The anisotropic strain in the films is obtained from high-resolution x-ray diffraction measurements. Experimental evidence for splitting of the GaN E1 (TO), E1 (LO), and E2 phonons under anisotropic strain in the basal plane is presented, and their phonon deformation potentials c E1 (TO), c E1 (LO), and c E2 are determined. A distinct correlation between anisotropic strain and the A1 (TO) and E1 (LO) frequencies of a -plane GaN films reveals the a A1 (TO), b A1 (TO), a E1 (LO), and b E1 (LO) phonon deformation potentials. The a A1 (TO) and b A1 (TO) are found to be in very good agreement with previous results from Raman experiments. Our a A1 (TO) and a E1 (LO) phonon deformation potentials agree well with recently reported theoretical estimations, while b A1 (TO) and b E1 (LO) are found to be significantly larger than the theoretical values. A discussion of the observed differences is presented.

UR - http://www.scopus.com/inward/record.url?scp=34347359718&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=34347359718&partnerID=8YFLogxK

U2 - 10.1103/PhysRevB.75.195217

DO - 10.1103/PhysRevB.75.195217

M3 - Article

AN - SCOPUS:34347359718

VL - 75

JO - Physical Review B-Condensed Matter

JF - Physical Review B-Condensed Matter

SN - 1098-0121

IS - 19

M1 - 195217

ER -