Analysis of strain in dielectric coated three dimensional Si micropillar arrays

Lars F. Voss, Cathy E. Reinhardt, Robert T. Graff, Adam M. Conway, Qinghui Shao, Rebecca J. Nikolic, Mushtaq A. Dar, Chin Li "Barry" Cheung

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

Stress induced in [100] oriented Si circular micropillars by coatings of low pressure chemical vapor deposited 10B, SiyN x, and plasma enhanced chemical vapor deposited SiO2 were measured using micro-Raman spectroscopy. Both tensile and compressive strains in the Si micropillars were observed. Exceptionally large stresses were found to exist in some of the measured Si micropillars. The cross-sectional shapes of these structures were shown to be an important factor in correlating their strain concentrations which could fracture the micropillar.

Original languageEnglish (US)
Article number60602
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume31
Issue number6
DOIs
StatePublished - Nov 1 2013

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Vapors
vapors
Raman spectroscopy
low pressure
Plasmas
coatings
Coatings

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Electrical and Electronic Engineering

Cite this

Analysis of strain in dielectric coated three dimensional Si micropillar arrays. / Voss, Lars F.; Reinhardt, Cathy E.; Graff, Robert T.; Conway, Adam M.; Shao, Qinghui; Nikolic, Rebecca J.; Dar, Mushtaq A.; Cheung, Chin Li "Barry".

In: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, Vol. 31, No. 6, 60602, 01.11.2013.

Research output: Contribution to journalArticle

Voss, Lars F. ; Reinhardt, Cathy E. ; Graff, Robert T. ; Conway, Adam M. ; Shao, Qinghui ; Nikolic, Rebecca J. ; Dar, Mushtaq A. ; Cheung, Chin Li "Barry". / Analysis of strain in dielectric coated three dimensional Si micropillar arrays. In: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 2013 ; Vol. 31, No. 6.
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