All-solid-state electrochromic reflectance device for emittance modulation in the far-infrared spectral region

E. B. Franke, C. L. Trimble, M. Schubert, J. A. Woollam, J. S. Hale

Research output: Contribution to journalArticle

47 Citations (Scopus)

Abstract

All-solid-state electrochromic reflectance devices for thermal emittance modulation were designed for operation in the spectral region from mid- to far-infrared wavelengths (2-40 μm). All device constituent layers were grown by magnetron sputtering. The electrochromic (polycrystalline WO3), ion conductor (Ta2O5), and Li+ ion-storage layer (amorphous WO3), optimized for their infrared (IR) optical thicknesses, are sandwiched between a highly IR reflecting Al mirror, and a 90% IR transmissive Al grid top electrode, thereby meeting the requirements for a reversible Li+ ion insertion electrochromic device to operate within the 300 K blackbody emission range. Multicycle optical switching and emittance modulation is demonstrated. The measured change in emissivity of the device is to 20%.

Original languageEnglish (US)
Pages (from-to)930-932
Number of pages3
JournalApplied Physics Letters
Volume77
Issue number7
DOIs
StatePublished - Aug 14 2000

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emittance
solid state
reflectance
modulation
ion storage
optical switching
emissivity
optical thickness
insertion
magnetron sputtering
ions
conductors
grids
mirrors
requirements
electrodes
wavelengths

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

All-solid-state electrochromic reflectance device for emittance modulation in the far-infrared spectral region. / Franke, E. B.; Trimble, C. L.; Schubert, M.; Woollam, J. A.; Hale, J. S.

In: Applied Physics Letters, Vol. 77, No. 7, 14.08.2000, p. 930-932.

Research output: Contribution to journalArticle

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