Adsorption of O2, H2, CO, NH3, and NO 2 on ZnO nanotube: A density functional theory study

Wei An, Xiaojun Wu, X. C. Zeng

Research output: Contribution to journalArticle

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Abstract

Using density functional theory (DFT), we have investigated the structural and electronic properties of a prototype ZnO (6,0) zigzag single-walled nanotube (SWNT) with and without oxygen vacancy (Vo), as well as its potential application as a sensor for gas molecules O2, H 2, CO, NH3, and NO2. The DFT calculation shows that the defect-free ZnO (6,0) SWNT is semiconducting with a direct band gap larger than that of bulk ZnO. By introducing the Vo defects, localized impurity states are induced above the valence band maximum while the Fermi level is lifted. As such, the defect-containing ZnO (6,0) SWNT becomes an n-type semiconductor. On the sidewall of a defect-free ZnO (6,0) SWNT, O 2 and H2 molecules are physisorbed while CO, NH 3, and NO2 are molecularly chemisorbed. With the V o defects, the binding interaction between gas molecules and the ZnO nanotube becomes stronger. The electron-donor molecules (CO and NH3) tend to enhance the concentration of major carriers (electrons), whereas the electron-acceptor molecules (O2 and NO2) tend to reduce the concentration. Moreover, we find that O2 and NO2 can dissociate at the Vo sites through filling the Vo with one atomic O originated from the adsorbates. The dissociation of O2 is exothermic and barrierless while the dissociation of NO2 is also exothermic but entails a small activation barrier (0.49 eV).

Original languageEnglish (US)
Pages (from-to)5747-5755
Number of pages9
JournalJournal of Physical Chemistry C
Volume112
Issue number15
DOIs
StatePublished - Apr 17 2008

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Carbon Monoxide
Nanotubes
Density functional theory
nanotubes
density functional theory
Adsorption
Defects
Molecules
adsorption
defects
molecules
Electrons
Gases
dissociation
n-type semiconductors
electrons
Oxygen vacancies
Adsorbates
Valence bands
Fermi level

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Energy(all)
  • Physical and Theoretical Chemistry
  • Surfaces, Coatings and Films

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Adsorption of O2, H2, CO, NH3, and NO 2 on ZnO nanotube : A density functional theory study. / An, Wei; Wu, Xiaojun; Zeng, X. C.

In: Journal of Physical Chemistry C, Vol. 112, No. 15, 17.04.2008, p. 5747-5755.

Research output: Contribution to journalArticle

@article{0e55efb073044ec392d41e92ef2c22ea,
title = "Adsorption of O2, H2, CO, NH3, and NO 2 on ZnO nanotube: A density functional theory study",
abstract = "Using density functional theory (DFT), we have investigated the structural and electronic properties of a prototype ZnO (6,0) zigzag single-walled nanotube (SWNT) with and without oxygen vacancy (Vo), as well as its potential application as a sensor for gas molecules O2, H 2, CO, NH3, and NO2. The DFT calculation shows that the defect-free ZnO (6,0) SWNT is semiconducting with a direct band gap larger than that of bulk ZnO. By introducing the Vo defects, localized impurity states are induced above the valence band maximum while the Fermi level is lifted. As such, the defect-containing ZnO (6,0) SWNT becomes an n-type semiconductor. On the sidewall of a defect-free ZnO (6,0) SWNT, O 2 and H2 molecules are physisorbed while CO, NH 3, and NO2 are molecularly chemisorbed. With the V o defects, the binding interaction between gas molecules and the ZnO nanotube becomes stronger. The electron-donor molecules (CO and NH3) tend to enhance the concentration of major carriers (electrons), whereas the electron-acceptor molecules (O2 and NO2) tend to reduce the concentration. Moreover, we find that O2 and NO2 can dissociate at the Vo sites through filling the Vo with one atomic O originated from the adsorbates. The dissociation of O2 is exothermic and barrierless while the dissociation of NO2 is also exothermic but entails a small activation barrier (0.49 eV).",
author = "Wei An and Xiaojun Wu and Zeng, {X. C.}",
year = "2008",
month = "4",
day = "17",
doi = "10.1021/jp711105d",
language = "English (US)",
volume = "112",
pages = "5747--5755",
journal = "Journal of Physical Chemistry C",
issn = "1932-7447",
publisher = "American Chemical Society",
number = "15",

}

TY - JOUR

T1 - Adsorption of O2, H2, CO, NH3, and NO 2 on ZnO nanotube

T2 - A density functional theory study

AU - An, Wei

AU - Wu, Xiaojun

AU - Zeng, X. C.

PY - 2008/4/17

Y1 - 2008/4/17

N2 - Using density functional theory (DFT), we have investigated the structural and electronic properties of a prototype ZnO (6,0) zigzag single-walled nanotube (SWNT) with and without oxygen vacancy (Vo), as well as its potential application as a sensor for gas molecules O2, H 2, CO, NH3, and NO2. The DFT calculation shows that the defect-free ZnO (6,0) SWNT is semiconducting with a direct band gap larger than that of bulk ZnO. By introducing the Vo defects, localized impurity states are induced above the valence band maximum while the Fermi level is lifted. As such, the defect-containing ZnO (6,0) SWNT becomes an n-type semiconductor. On the sidewall of a defect-free ZnO (6,0) SWNT, O 2 and H2 molecules are physisorbed while CO, NH 3, and NO2 are molecularly chemisorbed. With the V o defects, the binding interaction between gas molecules and the ZnO nanotube becomes stronger. The electron-donor molecules (CO and NH3) tend to enhance the concentration of major carriers (electrons), whereas the electron-acceptor molecules (O2 and NO2) tend to reduce the concentration. Moreover, we find that O2 and NO2 can dissociate at the Vo sites through filling the Vo with one atomic O originated from the adsorbates. The dissociation of O2 is exothermic and barrierless while the dissociation of NO2 is also exothermic but entails a small activation barrier (0.49 eV).

AB - Using density functional theory (DFT), we have investigated the structural and electronic properties of a prototype ZnO (6,0) zigzag single-walled nanotube (SWNT) with and without oxygen vacancy (Vo), as well as its potential application as a sensor for gas molecules O2, H 2, CO, NH3, and NO2. The DFT calculation shows that the defect-free ZnO (6,0) SWNT is semiconducting with a direct band gap larger than that of bulk ZnO. By introducing the Vo defects, localized impurity states are induced above the valence band maximum while the Fermi level is lifted. As such, the defect-containing ZnO (6,0) SWNT becomes an n-type semiconductor. On the sidewall of a defect-free ZnO (6,0) SWNT, O 2 and H2 molecules are physisorbed while CO, NH 3, and NO2 are molecularly chemisorbed. With the V o defects, the binding interaction between gas molecules and the ZnO nanotube becomes stronger. The electron-donor molecules (CO and NH3) tend to enhance the concentration of major carriers (electrons), whereas the electron-acceptor molecules (O2 and NO2) tend to reduce the concentration. Moreover, we find that O2 and NO2 can dissociate at the Vo sites through filling the Vo with one atomic O originated from the adsorbates. The dissociation of O2 is exothermic and barrierless while the dissociation of NO2 is also exothermic but entails a small activation barrier (0.49 eV).

UR - http://www.scopus.com/inward/record.url?scp=43849090824&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=43849090824&partnerID=8YFLogxK

U2 - 10.1021/jp711105d

DO - 10.1021/jp711105d

M3 - Article

AN - SCOPUS:43849090824

VL - 112

SP - 5747

EP - 5755

JO - Journal of Physical Chemistry C

JF - Journal of Physical Chemistry C

SN - 1932-7447

IS - 15

ER -