Ab initio calculations and ellipsometry measurements of the optical properties of the layered semiconductor In4 Se3

L. Makinistian, E. A. Albanesi, N. V. Gonzalez Lemus, A. G. Petukhov, D. Schmidt, E. Schubert, M. Schubert, Ya B. Losovyj, P. Galiy, P. Dowben

Research output: Contribution to journalArticle

16 Citations (Scopus)

Abstract

In this work, we present a thorough study of the optical properties of the layered orthorhombic compound In4 Se3. The dielectric function-real and imaginary parts, the complex refraction index, the reflectivity, the absorption coefficient, and the conductivity of In4 Se3 were calculated with the inclusion of the spin-orbit interaction, using an ab initio FP-LAPW method based on DFT. Also, generalized ellipsometry was employed for more precise measurement of the anisotropic dielectric functions for polarization along crystal a, b, and c axes of orthorhombic absorbing In4 Se3 single crystals cut approximately parallel to (100) at photon energies from 0.76 to 3.1 eV. Our experimental results show a good agreement with our calculations. We discuss the location and nature of the main optical peaks appearing in the spectra. The obtained optical functions display a rather anisotropic behavior, mainly in the infrared-visible region. Our results seem to be predictive to a high extension, given the scarce experimental information about its optical properties.

Original languageEnglish (US)
Article number075217
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume81
Issue number7
DOIs
StatePublished - Feb 26 2010

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Ellipsometry
ellipsometry
Optical properties
optical properties
Refraction
spin-orbit interactions
Discrete Fourier transforms
refraction
absorptivity
Orbits
Photons
Single crystals
inclusions
Polarization
Infrared radiation
reflectance
conductivity
Crystals
single crystals
photons

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Cite this

Makinistian, L., Albanesi, E. A., Gonzalez Lemus, N. V., Petukhov, A. G., Schmidt, D., Schubert, E., ... Dowben, P. (2010). Ab initio calculations and ellipsometry measurements of the optical properties of the layered semiconductor In4 Se3. Physical Review B - Condensed Matter and Materials Physics, 81(7), [075217]. https://doi.org/10.1103/PhysRevB.81.075217

Ab initio calculations and ellipsometry measurements of the optical properties of the layered semiconductor In4 Se3. / Makinistian, L.; Albanesi, E. A.; Gonzalez Lemus, N. V.; Petukhov, A. G.; Schmidt, D.; Schubert, E.; Schubert, M.; Losovyj, Ya B.; Galiy, P.; Dowben, P.

In: Physical Review B - Condensed Matter and Materials Physics, Vol. 81, No. 7, 075217, 26.02.2010.

Research output: Contribution to journalArticle

Makinistian, L, Albanesi, EA, Gonzalez Lemus, NV, Petukhov, AG, Schmidt, D, Schubert, E, Schubert, M, Losovyj, YB, Galiy, P & Dowben, P 2010, 'Ab initio calculations and ellipsometry measurements of the optical properties of the layered semiconductor In4 Se3', Physical Review B - Condensed Matter and Materials Physics, vol. 81, no. 7, 075217. https://doi.org/10.1103/PhysRevB.81.075217
Makinistian, L. ; Albanesi, E. A. ; Gonzalez Lemus, N. V. ; Petukhov, A. G. ; Schmidt, D. ; Schubert, E. ; Schubert, M. ; Losovyj, Ya B. ; Galiy, P. ; Dowben, P. / Ab initio calculations and ellipsometry measurements of the optical properties of the layered semiconductor In4 Se3. In: Physical Review B - Condensed Matter and Materials Physics. 2010 ; Vol. 81, No. 7.
@article{e5610eff88ea46b2938cc15161f9db98,
title = "Ab initio calculations and ellipsometry measurements of the optical properties of the layered semiconductor In4 Se3",
abstract = "In this work, we present a thorough study of the optical properties of the layered orthorhombic compound In4 Se3. The dielectric function-real and imaginary parts, the complex refraction index, the reflectivity, the absorption coefficient, and the conductivity of In4 Se3 were calculated with the inclusion of the spin-orbit interaction, using an ab initio FP-LAPW method based on DFT. Also, generalized ellipsometry was employed for more precise measurement of the anisotropic dielectric functions for polarization along crystal a, b, and c axes of orthorhombic absorbing In4 Se3 single crystals cut approximately parallel to (100) at photon energies from 0.76 to 3.1 eV. Our experimental results show a good agreement with our calculations. We discuss the location and nature of the main optical peaks appearing in the spectra. The obtained optical functions display a rather anisotropic behavior, mainly in the infrared-visible region. Our results seem to be predictive to a high extension, given the scarce experimental information about its optical properties.",
author = "L. Makinistian and Albanesi, {E. A.} and {Gonzalez Lemus}, {N. V.} and Petukhov, {A. G.} and D. Schmidt and E. Schubert and M. Schubert and Losovyj, {Ya B.} and P. Galiy and P. Dowben",
year = "2010",
month = "2",
day = "26",
doi = "10.1103/PhysRevB.81.075217",
language = "English (US)",
volume = "81",
journal = "Physical Review B-Condensed Matter",
issn = "1098-0121",
publisher = "American Institute of Physics Publising LLC",
number = "7",

}

TY - JOUR

T1 - Ab initio calculations and ellipsometry measurements of the optical properties of the layered semiconductor In4 Se3

AU - Makinistian, L.

AU - Albanesi, E. A.

AU - Gonzalez Lemus, N. V.

AU - Petukhov, A. G.

AU - Schmidt, D.

AU - Schubert, E.

AU - Schubert, M.

AU - Losovyj, Ya B.

AU - Galiy, P.

AU - Dowben, P.

PY - 2010/2/26

Y1 - 2010/2/26

N2 - In this work, we present a thorough study of the optical properties of the layered orthorhombic compound In4 Se3. The dielectric function-real and imaginary parts, the complex refraction index, the reflectivity, the absorption coefficient, and the conductivity of In4 Se3 were calculated with the inclusion of the spin-orbit interaction, using an ab initio FP-LAPW method based on DFT. Also, generalized ellipsometry was employed for more precise measurement of the anisotropic dielectric functions for polarization along crystal a, b, and c axes of orthorhombic absorbing In4 Se3 single crystals cut approximately parallel to (100) at photon energies from 0.76 to 3.1 eV. Our experimental results show a good agreement with our calculations. We discuss the location and nature of the main optical peaks appearing in the spectra. The obtained optical functions display a rather anisotropic behavior, mainly in the infrared-visible region. Our results seem to be predictive to a high extension, given the scarce experimental information about its optical properties.

AB - In this work, we present a thorough study of the optical properties of the layered orthorhombic compound In4 Se3. The dielectric function-real and imaginary parts, the complex refraction index, the reflectivity, the absorption coefficient, and the conductivity of In4 Se3 were calculated with the inclusion of the spin-orbit interaction, using an ab initio FP-LAPW method based on DFT. Also, generalized ellipsometry was employed for more precise measurement of the anisotropic dielectric functions for polarization along crystal a, b, and c axes of orthorhombic absorbing In4 Se3 single crystals cut approximately parallel to (100) at photon energies from 0.76 to 3.1 eV. Our experimental results show a good agreement with our calculations. We discuss the location and nature of the main optical peaks appearing in the spectra. The obtained optical functions display a rather anisotropic behavior, mainly in the infrared-visible region. Our results seem to be predictive to a high extension, given the scarce experimental information about its optical properties.

UR - http://www.scopus.com/inward/record.url?scp=77954846399&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=77954846399&partnerID=8YFLogxK

U2 - 10.1103/PhysRevB.81.075217

DO - 10.1103/PhysRevB.81.075217

M3 - Article

AN - SCOPUS:77954846399

VL - 81

JO - Physical Review B-Condensed Matter

JF - Physical Review B-Condensed Matter

SN - 1098-0121

IS - 7

M1 - 075217

ER -