A Low-Temperature Fabrication Method for WSe2 Films Grown from Nanocrystalline Precursors

Christopher L. Exstrom, Scott A. Darveau, Joshua S. Edgar, C. J. Curry, Michael P. Hanrahan, Qinglei Ma, Matthew Hilfiker, Aaron Ediger, Natale J. Ianno

Research output: Contribution to journalArticle

Abstract

WSe2 films have been fabricated using a low-temperature, two-step method involving the reaction of W(CO)6 and elemental selenium in refluxing (110 °C) toluene to form a nanocrystalline precursor consisting of amorphous tungsten and trigonal crystalline selenium. Drop cast or airbrush-deposited films of this precursor were annealed in an argon atmosphere using a two-step temperature ramp (250 °C for 15 min followed by 550 °C for 30 min). Raman and x-ray diffraction (XRD) characterization as well as the measured bandgaps of the resulting films are consistent with (002)-oriented WSe2 and are compared to the characterization of films produced via selenization of sputtered tungsten films in closed quartz tubes at 875 °C.

Original languageEnglish (US)
Pages (from-to)2821-2826
Number of pages6
JournalMRS Advances
Volume1
Issue number41
DOIs
Publication statusPublished - Jan 1 2016

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Keywords

  • annealing
  • semiconducting
  • thin film

ASJC Scopus subject areas

  • Mechanical Engineering
  • Mechanics of Materials
  • Materials Science(all)
  • Condensed Matter Physics

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