A Low-Temperature Fabrication Method for WSe2 Films Grown from Nanocrystalline Precursors

Christopher L. Exstrom, Scott A. Darveau, Joshua S. Edgar, C. J. Curry, Michael P. Hanrahan, Qinglei Ma, Matthew Hilfiker, Aaron Ediger, Natale J. Ianno

Research output: Contribution to journalArticle

Abstract

WSe2 films have been fabricated using a low-temperature, two-step method involving the reaction of W(CO)6 and elemental selenium in refluxing (110 °C) toluene to form a nanocrystalline precursor consisting of amorphous tungsten and trigonal crystalline selenium. Drop cast or airbrush-deposited films of this precursor were annealed in an argon atmosphere using a two-step temperature ramp (250 °C for 15 min followed by 550 °C for 30 min). Raman and x-ray diffraction (XRD) characterization as well as the measured bandgaps of the resulting films are consistent with (002)-oriented WSe2 and are compared to the characterization of films produced via selenization of sputtered tungsten films in closed quartz tubes at 875 °C.

Original languageEnglish (US)
Pages (from-to)2821-2826
Number of pages6
JournalMRS Advances
Volume1
Issue number41
DOIs
StatePublished - Jan 1 2016

Fingerprint

Fabrication
fabrication
Tungsten
Selenium
selenium
tungsten
Temperature
Quartz
Argon
Toluene
ramps
toluene
casts
Energy gap
x ray diffraction
quartz
Diffraction
argon
tubes
Crystalline materials

Keywords

  • annealing
  • semiconducting
  • thin film

ASJC Scopus subject areas

  • Mechanical Engineering
  • Mechanics of Materials
  • Materials Science(all)
  • Condensed Matter Physics

Cite this

A Low-Temperature Fabrication Method for WSe2 Films Grown from Nanocrystalline Precursors. / Exstrom, Christopher L.; Darveau, Scott A.; Edgar, Joshua S.; Curry, C. J.; Hanrahan, Michael P.; Ma, Qinglei; Hilfiker, Matthew; Ediger, Aaron; Ianno, Natale J.

In: MRS Advances, Vol. 1, No. 41, 01.01.2016, p. 2821-2826.

Research output: Contribution to journalArticle

Exstrom, CL, Darveau, SA, Edgar, JS, Curry, CJ, Hanrahan, MP, Ma, Q, Hilfiker, M, Ediger, A & Ianno, NJ 2016, 'A Low-Temperature Fabrication Method for WSe2 Films Grown from Nanocrystalline Precursors', MRS Advances, vol. 1, no. 41, pp. 2821-2826. https://doi.org/10.1557/adv.2016.437
Exstrom, Christopher L. ; Darveau, Scott A. ; Edgar, Joshua S. ; Curry, C. J. ; Hanrahan, Michael P. ; Ma, Qinglei ; Hilfiker, Matthew ; Ediger, Aaron ; Ianno, Natale J. / A Low-Temperature Fabrication Method for WSe2 Films Grown from Nanocrystalline Precursors. In: MRS Advances. 2016 ; Vol. 1, No. 41. pp. 2821-2826.
@article{9ef2027c495c468a93ba5248aac5ccb1,
title = "A Low-Temperature Fabrication Method for WSe2 Films Grown from Nanocrystalline Precursors",
abstract = "WSe2 films have been fabricated using a low-temperature, two-step method involving the reaction of W(CO)6 and elemental selenium in refluxing (110 °C) toluene to form a nanocrystalline precursor consisting of amorphous tungsten and trigonal crystalline selenium. Drop cast or airbrush-deposited films of this precursor were annealed in an argon atmosphere using a two-step temperature ramp (250 °C for 15 min followed by 550 °C for 30 min). Raman and x-ray diffraction (XRD) characterization as well as the measured bandgaps of the resulting films are consistent with (002)-oriented WSe2 and are compared to the characterization of films produced via selenization of sputtered tungsten films in closed quartz tubes at 875 °C.",
keywords = "annealing, semiconducting, thin film",
author = "Exstrom, {Christopher L.} and Darveau, {Scott A.} and Edgar, {Joshua S.} and Curry, {C. J.} and Hanrahan, {Michael P.} and Qinglei Ma and Matthew Hilfiker and Aaron Ediger and Ianno, {Natale J.}",
year = "2016",
month = "1",
day = "1",
doi = "10.1557/adv.2016.437",
language = "English (US)",
volume = "1",
pages = "2821--2826",
journal = "MRS Advances",
issn = "2059-8521",
number = "41",

}

TY - JOUR

T1 - A Low-Temperature Fabrication Method for WSe2 Films Grown from Nanocrystalline Precursors

AU - Exstrom, Christopher L.

AU - Darveau, Scott A.

AU - Edgar, Joshua S.

AU - Curry, C. J.

AU - Hanrahan, Michael P.

AU - Ma, Qinglei

AU - Hilfiker, Matthew

AU - Ediger, Aaron

AU - Ianno, Natale J.

PY - 2016/1/1

Y1 - 2016/1/1

N2 - WSe2 films have been fabricated using a low-temperature, two-step method involving the reaction of W(CO)6 and elemental selenium in refluxing (110 °C) toluene to form a nanocrystalline precursor consisting of amorphous tungsten and trigonal crystalline selenium. Drop cast or airbrush-deposited films of this precursor were annealed in an argon atmosphere using a two-step temperature ramp (250 °C for 15 min followed by 550 °C for 30 min). Raman and x-ray diffraction (XRD) characterization as well as the measured bandgaps of the resulting films are consistent with (002)-oriented WSe2 and are compared to the characterization of films produced via selenization of sputtered tungsten films in closed quartz tubes at 875 °C.

AB - WSe2 films have been fabricated using a low-temperature, two-step method involving the reaction of W(CO)6 and elemental selenium in refluxing (110 °C) toluene to form a nanocrystalline precursor consisting of amorphous tungsten and trigonal crystalline selenium. Drop cast or airbrush-deposited films of this precursor were annealed in an argon atmosphere using a two-step temperature ramp (250 °C for 15 min followed by 550 °C for 30 min). Raman and x-ray diffraction (XRD) characterization as well as the measured bandgaps of the resulting films are consistent with (002)-oriented WSe2 and are compared to the characterization of films produced via selenization of sputtered tungsten films in closed quartz tubes at 875 °C.

KW - annealing

KW - semiconducting

KW - thin film

UR - http://www.scopus.com/inward/record.url?scp=85041299421&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85041299421&partnerID=8YFLogxK

U2 - 10.1557/adv.2016.437

DO - 10.1557/adv.2016.437

M3 - Article

AN - SCOPUS:85041299421

VL - 1

SP - 2821

EP - 2826

JO - MRS Advances

JF - MRS Advances

SN - 2059-8521

IS - 41

ER -