3C(β)-SiC-on insulator waveguide structures for modulators and sensor systems

Adrian Vonsovici, Graham T. Reed, M. Josey, P. Routley, Alan G R Evans, Fereydoon Namavar

Research output: Contribution to journalConference article

2 Citations (Scopus)

Abstract

In this work planar and rib β-SiC-on-insulator waveguides were investigated. The waveguides were fabricated by two different methods. In the first a technological process similar to that of SIMOX was used, a buried SiO2 layer was formed by a two-step high-energy ion implantation of oxygen in SiC/Si wafers. For the second type of waveguides we used heteroepitaxy of SiC on SOI(SIMOX). The losses have been measured at 1.3 and 1.55μm. Rib waveguides were fabricated using dry-etching (RIE). These types of waveguides have great potential for high-speed silicon-based photonic devices compatible with silicon technology.

Original languageEnglish (US)
Pages (from-to)352-359
Number of pages8
JournalProceedings of SPIE - The International Society for Optical Engineering
Volume3896
StatePublished - Dec 1 1999
EventProceedings of the 1999 Design, Fabrication, and Characterization of Photonic Devices - Singapore, Singapore
Duration: Nov 30 1999Dec 3 1999

Fingerprint

Insulator
Modulator
Modulators
Waveguide
modulators
Waveguides
insulators
waveguides
Sensor
sensors
Sensors
Silicon
Ion Implantation
Photonic devices
Dry etching
Reactive ion etching
SiO2
SOI (semiconductors)
silicon
Etching

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Condensed Matter Physics

Cite this

Vonsovici, A., Reed, G. T., Josey, M., Routley, P., Evans, A. G. R., & Namavar, F. (1999). 3C(β)-SiC-on insulator waveguide structures for modulators and sensor systems. Proceedings of SPIE - The International Society for Optical Engineering, 3896, 352-359.

3C(β)-SiC-on insulator waveguide structures for modulators and sensor systems. / Vonsovici, Adrian; Reed, Graham T.; Josey, M.; Routley, P.; Evans, Alan G R; Namavar, Fereydoon.

In: Proceedings of SPIE - The International Society for Optical Engineering, Vol. 3896, 01.12.1999, p. 352-359.

Research output: Contribution to journalConference article

Vonsovici, A, Reed, GT, Josey, M, Routley, P, Evans, AGR & Namavar, F 1999, '3C(β)-SiC-on insulator waveguide structures for modulators and sensor systems', Proceedings of SPIE - The International Society for Optical Engineering, vol. 3896, pp. 352-359.
Vonsovici, Adrian ; Reed, Graham T. ; Josey, M. ; Routley, P. ; Evans, Alan G R ; Namavar, Fereydoon. / 3C(β)-SiC-on insulator waveguide structures for modulators and sensor systems. In: Proceedings of SPIE - The International Society for Optical Engineering. 1999 ; Vol. 3896. pp. 352-359.
@article{a4be1ddf395746ff9114375333551318,
title = "3C(β)-SiC-on insulator waveguide structures for modulators and sensor systems",
abstract = "In this work planar and rib β-SiC-on-insulator waveguides were investigated. The waveguides were fabricated by two different methods. In the first a technological process similar to that of SIMOX was used, a buried SiO2 layer was formed by a two-step high-energy ion implantation of oxygen in SiC/Si wafers. For the second type of waveguides we used heteroepitaxy of SiC on SOI(SIMOX). The losses have been measured at 1.3 and 1.55μm. Rib waveguides were fabricated using dry-etching (RIE). These types of waveguides have great potential for high-speed silicon-based photonic devices compatible with silicon technology.",
author = "Adrian Vonsovici and Reed, {Graham T.} and M. Josey and P. Routley and Evans, {Alan G R} and Fereydoon Namavar",
year = "1999",
month = "12",
day = "1",
language = "English (US)",
volume = "3896",
pages = "352--359",
journal = "Proceedings of SPIE - The International Society for Optical Engineering",
issn = "0277-786X",
publisher = "SPIE",

}

TY - JOUR

T1 - 3C(β)-SiC-on insulator waveguide structures for modulators and sensor systems

AU - Vonsovici, Adrian

AU - Reed, Graham T.

AU - Josey, M.

AU - Routley, P.

AU - Evans, Alan G R

AU - Namavar, Fereydoon

PY - 1999/12/1

Y1 - 1999/12/1

N2 - In this work planar and rib β-SiC-on-insulator waveguides were investigated. The waveguides were fabricated by two different methods. In the first a technological process similar to that of SIMOX was used, a buried SiO2 layer was formed by a two-step high-energy ion implantation of oxygen in SiC/Si wafers. For the second type of waveguides we used heteroepitaxy of SiC on SOI(SIMOX). The losses have been measured at 1.3 and 1.55μm. Rib waveguides were fabricated using dry-etching (RIE). These types of waveguides have great potential for high-speed silicon-based photonic devices compatible with silicon technology.

AB - In this work planar and rib β-SiC-on-insulator waveguides were investigated. The waveguides were fabricated by two different methods. In the first a technological process similar to that of SIMOX was used, a buried SiO2 layer was formed by a two-step high-energy ion implantation of oxygen in SiC/Si wafers. For the second type of waveguides we used heteroepitaxy of SiC on SOI(SIMOX). The losses have been measured at 1.3 and 1.55μm. Rib waveguides were fabricated using dry-etching (RIE). These types of waveguides have great potential for high-speed silicon-based photonic devices compatible with silicon technology.

UR - http://www.scopus.com/inward/record.url?scp=0033315172&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0033315172&partnerID=8YFLogxK

M3 - Conference article

VL - 3896

SP - 352

EP - 359

JO - Proceedings of SPIE - The International Society for Optical Engineering

JF - Proceedings of SPIE - The International Society for Optical Engineering

SN - 0277-786X

ER -